Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100)

J. He, R. Nötzel, P. Offermans, P. M. Koenraad, Q. Gong, G. J. Hamhuis, T. J. Eijkemans, J. H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

Control of the height of (In,Ga)As quantum dots (QDs) on GaAs (100) substrates is presented. Columnar (In,Ga)As QDs that are homogeneous both in composition and shape along the growth direction are created by molecular beam epitaxy. The columnar QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar QDs is controlled by varying the number of GaAs/InAs layers. With increased height the photoluminescence (PL) emission wavelength of the columnar QDs is red-shifted and the line width narrows. Uncapped columnar QDs (surface QDs) emit PL at a long peak wavelength of 1.45 μm at RT due to reduced compressive strain.

Originele taal-2Engels
Titel2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's125-130
Aantal pagina's6
ISBN van geprinte versie078038668X, 9780780386686
DOI's
StatusGepubliceerd - 1 dec 2005
Evenement2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China
Duur: 20 sep 200425 sep 2004

Congres

Congres2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
LandChina
StadBeijing
Periode20/09/0425/09/04

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