### Samenvatting

The tunability of the exciton g factor in InGaAs quantum dots using compressive biaxial stress applied by piezoelectric actuators is investigated. We find a clear relation between the exciton g factor and the applied stress. A linear decrease of the g factor with compressive biaxial strain is observed consistently in all investigated dots. A connection is established between the response of the exciton g factor to the voltage applied to the piezoelectric actuator and the response of the quantum dot emission energy. We employ a numerical model based on eight-band k⋅p theory to calculate the exciton g factor of a typical dot as a function of strain and a good agreement with our experiments is found. Our calculations reveal that the change in exciton g factor is dominated by the contribution of the valence band and originates from increased heavy hole light hole splitting when applying external stress.

Originele taal-2 | Engels |
---|---|

Artikelnummer | 245301 |

Pagina's (van-tot) | 1-6 |

Tijdschrift | Physical Review B |

Volume | 94 |

Nummer van het tijdschrift | 24 |

DOI's | |

Status | Gepubliceerd - 2 dec 2016 |

## Citeer dit

Tholen, H. M. G. A., Wildmann, J. S., Rastelli, A., Trotta, R., Pryor, C. E., Zallo, E., Schmidt, O. G., Koenraad, P. M., & Silov, A. Y. (2016). Strain-induced g-factor tuning in single InGaAs/GaAs quantum dots.

*Physical Review B*,*94*(24), 1-6. [245301]. https://doi.org/10.1103/PhysRevB.94.245301