Strain-induced g-factor tuning in single InGaAs/GaAs quantum dots

H.M.G.A. Tholen, J.S. Wildmann, A. Rastelli, R. Trotta, C.E. Pryor, E. Zallo, O.G. Schmidt, P.M. Koenraad, A. Yu Silov

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Samenvatting

The tunability of the exciton g factor in InGaAs quantum dots using compressive biaxial stress applied by piezoelectric actuators is investigated. We find a clear relation between the exciton g factor and the applied stress. A linear decrease of the g factor with compressive biaxial strain is observed consistently in all investigated dots. A connection is established between the response of the exciton g factor to the voltage applied to the piezoelectric actuator and the response of the quantum dot emission energy. We employ a numerical model based on eight-band k⋅p theory to calculate the exciton g factor of a typical dot as a function of strain and a good agreement with our experiments is found. Our calculations reveal that the change in exciton g factor is dominated by the contribution of the valence band and originates from increased heavy hole light hole splitting when applying external stress.
Originele taal-2Engels
Artikelnummer245301
Pagina's (van-tot)1-6
TijdschriftPhysical Review B
Volume94
Nummer van het tijdschrift24
DOI's
StatusGepubliceerd - 2 dec 2016

Citeer dit

Tholen, H. M. G. A., Wildmann, J. S., Rastelli, A., Trotta, R., Pryor, C. E., Zallo, E., Schmidt, O. G., Koenraad, P. M., & Silov, A. Y. (2016). Strain-induced g-factor tuning in single InGaAs/GaAs quantum dots. Physical Review B, 94(24), 1-6. [245301]. https://doi.org/10.1103/PhysRevB.94.245301