Strain engineering in Ge/GeSn core/shell nanowires

S. Assali (Corresponding author), M. Albani (Corresponding author), R. Bergamaschini, M.A. Verheijen, A. Li, S. Kölling, L. Gagliano, E.P.A.M. Bakkers, L. Miglio

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Uittreksel

Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct bandgap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell nanowire geometry by controlling the Ge core diameter and correlating the results with theoretical strain calculations. Incorporation of the Sn content in the 10-20 at. % range is achieved with Ge core diameters ranging from 50 nm to 100 nm. While the smaller cores lead to the formation of a regular and homogeneous GeSn shell, larger cores lead to the formation of multifaceted sidewalls and broadened segregation domains, inducing the nucleation of defects. This behavior is rationalized in terms of the different residual strain, as obtained by realistic finite element method simulations. The extended analysis of the strain relaxation as a function of core and shell sizes, in comparison with the conventional planar geometry, provides a deeper understanding of the role of strain in the epitaxy of metastable GeSn semiconductors.

TaalEngels
Artikelnummer113102
TijdschriftApplied Physics Letters
Volume115
Nummer van het tijdschrift11
DOI's
StatusGepubliceerd - 9 sep 2019

Vingerafdruk

nanowires
engineering
geometry
epitaxy
finite element method
nucleation
defects
wavelengths
simulation

Citeer dit

Assali, S., Albani, M., Bergamaschini, R., Verheijen, M. A., Li, A., Kölling, S., ... Miglio, L. (2019). Strain engineering in Ge/GeSn core/shell nanowires. Applied Physics Letters, 115(11), [113102]. DOI: 10.1063/1.5111872
Assali, S. ; Albani, M. ; Bergamaschini, R. ; Verheijen, M.A. ; Li, A. ; Kölling, S. ; Gagliano, L. ; Bakkers, E.P.A.M. ; Miglio, L./ Strain engineering in Ge/GeSn core/shell nanowires. In: Applied Physics Letters. 2019 ; Vol. 115, Nr. 11.
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Assali, S, Albani, M, Bergamaschini, R, Verheijen, MA, Li, A, Kölling, S, Gagliano, L, Bakkers, EPAM & Miglio, L 2019, 'Strain engineering in Ge/GeSn core/shell nanowires' Applied Physics Letters, vol. 115, nr. 11, 113102. DOI: 10.1063/1.5111872

Strain engineering in Ge/GeSn core/shell nanowires. / Assali, S. (Corresponding author); Albani, M. (Corresponding author); Bergamaschini, R.; Verheijen, M.A.; Li, A.; Kölling, S.; Gagliano, L.; Bakkers, E.P.A.M.; Miglio, L.

In: Applied Physics Letters, Vol. 115, Nr. 11, 113102, 09.09.2019.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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Assali S, Albani M, Bergamaschini R, Verheijen MA, Li A, Kölling S et al. Strain engineering in Ge/GeSn core/shell nanowires. Applied Physics Letters. 2019 sep 9;115(11). 113102. Beschikbaar vanaf, DOI: 10.1063/1.5111872