Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics

Bart Macco; Bas W.H. van de Loo; Jimmy Melskens; Sjoerd Smit; W.M.M. Kessels

doi:10.1109/PVSC.2017.8366571

Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics

Bart Macco, Bas W.H. van de Loo, Jimmy Melskens, Sjoerd Smit, W.M.M. Kessels

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Samenvatting

In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al₂O₃-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.

Originele taal-2	Engels
Titel	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	1360-1365
Aantal pagina's	6
ISBN van elektronische versie	978-1-5090-5605-7
ISBN van geprinte versie	978-1-5090-5606-4
DOI's	https://doi.org/10.1109/PVSC.2017.8366571
Status	Gepubliceerd - 25 mei 2018
Evenement	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, Verenigde Staten van Amerika Duur: 25 jun. 2017 → 30 jun. 2017 Congresnummer: 44

Congres

Congres	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Verkorte titel	PVSC 2017
Land/Regio	Verenigde Staten van Amerika
Stad	Washington
Periode	25/06/17 → 30/06/17

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10.1109/PVSC.2017.8366571

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Macco, B., van de Loo, B. W. H., Melskens, J., Smit, S., & Kessels, W. M. M. (2018). Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (blz. 1360-1365). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2017.8366571

@inproceedings{bfe987fc6c944a73b24eec304e1e0034,

title = "Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics",

abstract = "In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al2O3-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.",

keywords = "Atomic layer deposition, Carrier selectivity, Passivating contacts, Passivation, Silicon heterojunctions, Transparent conductive oxides",

author = "Bart Macco and {van de Loo}, {Bas W.H.} and Jimmy Melskens and Sjoerd Smit and W.M.M. Kessels",

year = "2018",

month = may,

day = "25",

doi = "10.1109/PVSC.2017.8366571",

language = "English",

isbn = "978-1-5090-5606-4 ",

pages = "1360--1365",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "44th IEEE Photovoltaic Specialist Conference, PVSC 2017, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

}

Macco, B, van de Loo, BWH, Melskens, J, Smit, S & Kessels, WMM 2018, Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers, Piscataway, blz. 1360-1365, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, District of Columbia, Verenigde Staten van Amerika, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366571

Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics. / Macco, Bart; van de Loo, Bas W.H.; Melskens, Jimmy et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Piscataway: Institute of Electrical and Electronics Engineers, 2018. blz. 1360-1365.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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T1 - Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics

AU - Macco, Bart

AU - van de Loo, Bas W.H.

AU - Melskens, Jimmy

AU - Smit, Sjoerd

AU - Kessels, W.M.M.

N1 - Conference code: 44

PY - 2018/5/25

Y1 - 2018/5/25

N2 - In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al2O3-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.

AB - In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al2O3-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.

KW - Atomic layer deposition

KW - Carrier selectivity

KW - Passivating contacts

KW - Passivation

KW - Silicon heterojunctions

KW - Transparent conductive oxides

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BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

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Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics

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