Status and prospects for atomic layer deposited metal oxide thin films in passivating contacts for c-Si photovoltaics

B. Macco; B.W.H. van de Loo; J. Melskens; S. Smit; W.M.M.E. Kessels

doi:10.1109/PVSC.2016.7750088

Status and prospects for atomic layer deposited metal oxide thin films in passivating contacts for c-Si photovoltaics

B. Macco, B.W.H. van de Loo, J. Melskens, S. Smit, W.M.M.E. Kessels

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

4 Citaten (Scopus)

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In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al₂O₃-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.

Originele taal-2	Engels
Titel	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	2473-2478
Aantal pagina's	6
Volume	2016-November
ISBN van elektronische versie	9781509027248
DOI's	https://doi.org/10.1109/PVSC.2016.7750088
Status	Gepubliceerd - 18 nov. 2016
Evenement	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Oregon Convention Center, Portland, Verenigde Staten van Amerika Duur: 5 jun. 2016 → 10 jun. 2016 Congresnummer: 43 https://www.ieee-pvsc.org/PVSC43/

Congres

Congres	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Verkorte titel	PVSC 2016
Land/Regio	Verenigde Staten van Amerika
Stad	Portland
Periode	5/06/16 → 10/06/16
Internet adres	https://www.ieee-pvsc.org/PVSC43/

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10.1109/PVSC.2016.7750088

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Macco, B., van de Loo, B. W. H., Melskens, J., Smit, S., & Kessels, W. M. M. E. (2016). Status and prospects for atomic layer deposited metal oxide thin films in passivating contacts for c-Si photovoltaics. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, blz. 2473-2478). Artikel 7750088 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2016.7750088

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title = "Status and prospects for atomic layer deposited metal oxide thin films in passivating contacts for c-Si photovoltaics",

abstract = "In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al2O3-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.",

keywords = "atomic layer deposition, carrier selectivity, passivating contacts, passivation, silicon heterojunctions, transparent conductive oxides",

author = "B. Macco and {van de Loo}, B.W.H. and J. Melskens and S. Smit and W.M.M.E. Kessels",

year = "2016",

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doi = "10.1109/PVSC.2016.7750088",

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booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

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Macco, B, van de Loo, BWH, Melskens, J, Smit, S & Kessels, WMME 2016, Status and prospects for atomic layer deposited metal oxide thin films in passivating contacts for c-Si photovoltaics. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7750088, Institute of Electrical and Electronics Engineers, blz. 2473-2478, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, Oregon, Verenigde Staten van Amerika, 5/06/16. https://doi.org/10.1109/PVSC.2016.7750088

Status and prospects for atomic layer deposited metal oxide thin films in passivating contacts for c-Si photovoltaics. / Macco, B.; van de Loo, B.W.H.; Melskens, J. et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers, 2016. blz. 2473-2478 7750088.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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AU - Macco, B.

AU - van de Loo, B.W.H.

AU - Melskens, J.

AU - Smit, S.

AU - Kessels, W.M.M.E.

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N2 - In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al2O3-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.

AB - In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al2O3-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.

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Macco B, van de Loo BWH, Melskens J, Smit S, Kessels WMME. Status and prospects for atomic layer deposited metal oxide thin films in passivating contacts for c-Si photovoltaics. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers. 2016. blz. 2473-2478. 7750088 doi: 10.1109/PVSC.2016.7750088

Status and prospects for atomic layer deposited metal oxide thin films in passivating contacts for c-Si photovoltaics

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