Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE

X. Y. Chen, P. Koenraad, F. N. Hooge, J. H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

The noise properties of a δ-doped semiconductor structure was investigated at temperatures from 77 K to 300 K. The temperature-dependence of the parameter α of 1/f noise was experimentally determined. The activation energies of the trapping centers in each sample were determined by analyzing the temperature dependence of the generation-recombination noise (g-r noise).

Originele taal-2Engels
TitelProceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations, Leuven, Belgium
RedacteurenC. Claeys, E. Simoen
Pagina's457-460
Aantal pagina's4
StatusGepubliceerd - 1 dec 1997
Evenement1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations - Leuven, Belgium
Duur: 14 jul 199718 jul 1997

Congres

Congres1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations
StadLeuven, Belgium
Periode14/07/9718/07/97

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