Spatial Atmospheric Atomic Layer Deposition combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rates (up to nm/s). In this paper we present a short overview of our research activity carried out on S-ALD of functional thin films for the front window of copper indium gallium di-selenide (CIGS) solar cells. Zn(O,S) and ZnO:Al are grown by co-injecting the vaporized precursors of the cationic (O, S) and anionic (Zn, Al) elements, respectively. An insight on the growth characteristics and properties of Zn(O,S) and ZnO:Al is presented.