@inproceedings{e7f4749974ee4f84810759cc44bd32d8,
title = "Solid state transitions during the growth of silicon by chemical vapour deposition",
abstract = "The crystalline-amorphous transition during chemical vapour deposition of silicon has been studied. Results are reported for growth from 2.3 vol\% SiH4 177 in hydrogen at atmospheric pressure. From optical measurements two after-growth phenomena were discerned, viz. a change in emissivity below T = 6780C and a change in optical thickness below T = 7720C. Consistent with the mechanism of formation the observed optical phenomena are connected with differences in the structure of the deposited material and the related solid state transitions a-Si:H + a-Si + c-Si.",
author = "A.M. Beers and H.T.J.M. Hintzen and J. Bloem",
year = "1983",
doi = "10.1021/ic50012a005",
language = "English",
isbn = "0-444-42147-5",
series = "Studies in Inorganic Chemistry",
publisher = "Elsevier",
pages = "177--180",
editor = "R. Metselaar and H.J.M. Heijligers and J. Schoonman",
booktitle = "Proceedings of the 2nd European Conference on Solid State Chemistry in 1982 in Veldhoven (The Netherlands)",
address = "Netherlands",
}