Si/XeF2 etching: Temperature dependence

M.J.M. Vugts, G.L.J. Verschueren, M.F.A. Eurlings, L.J.F. Hermans, H.C.W. Beijerinck

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The temperature dependence of the Si(100)/XeF2 etch reaction is studied quantitatively in a molecular beam setup. At a sample temperature of 150 K the reaction probability reaches unity initially, after which the XeF2 condenses on the surface and blocks the etching process. For increasing temperatures the XeF2 reaction probability initially decreases from 100% at 150 K down to 20% around 400 K, but for temperatures above 600 K it increases again up to 45% at 900 K. In a simple reaction scheme the high etch rate at low temperatures is explained by a XeF2-precursor, with an activation energy for desorption of 32±4 meV. Furthermore the increased etch rate at high temperatures is explained by the desorption of SiF2 with an activation energy of 260±30 meV. The steady-state fluorine content of the SiFx reaction layer, measured using thermal desorption spectroscopy, reaches a maximum of 5.5 monolayers at 300 K. For increasing temperatures it decreases to a submonolayer coverage above 700 K. The temperature dependence of the formation of the reaction layer is described well by including the XeF2-precursor in a previously developed adsorption model. © 1996 American Vacuum Society
Originele taal-2Engels
Pagina's (van-tot)2766-2774
TijdschriftJournal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Nummer van het tijdschrift5
StatusGepubliceerd - 1996

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