Samenvatting
We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum cascade lasers. Structural investigation indicates the epitaxial quality of the active region to be equivalent to high performing MBE grown structures.
Originele taal-2 | Engels |
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Titel | Proceedings of the 2005 International Conference on Indium Phosphate and Related Materials IEEE, 8-12 May 2005, Glasgow, United Kingdom |
Plaats van productie | Piscataway, NJ, USA |
Uitgeverij | Institute of Electrical and Electronics Engineers |
Pagina's | 64-67 |
ISBN van geprinte versie | 0780388917 |
Status | Gepubliceerd - 2005 |