Single contact double -waveguide SOAs in AWG-based lasers fabricated on InP generic photonic integration platform

K. Lawniczuk; M.J. Wale; P. Szczepanski; R. Piramidowicz; M.K. Smit; X.J.M. Leijtens

Single contact double -waveguide SOAs in AWG-based lasers fabricated on InP generic photonic integration platform

K. Lawniczuk, M.J. Wale, P. Szczepanski, R. Piramidowicz, M.K. Smit, X.J.M. Leijtens

Photonic Integration

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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By implementing SOAs that guide two waveguides through a single contact active section, we can reduce dimensions ofphotonic integrated circuits (Tics.) and decrea,ce the number of electrical contacts of current injection. In this paper we demonstrate linear 4-channel and 8-channel A WG-based lasers that take advantage of such SOAs. This resulted in a reduction of the required number of active regions and contacts by a factor Iwo. Measurements showed that these sources operate with an output power of I in W per A WG-channel and side-mode suppression ratio better than 40 dB. The lasers were fabricated in a multi-project wafer run on an indium phosphide (InP,) based generic photonic integration platform.

Originele taal-2	Engels
Titel	Proceedings of the 18th Annual Symposium of the IEEE Photonics Society Benelux Chapter, 25-26 November 2013, Technische Universiteit Eindhoven
Redacteuren	X. Leijtens, D. Pustakhod
Plaats van productie	Eindhoven
Uitgeverij	Eindhoven University of Technology
Pagina's	275-278
ISBN van geprinte versie	978-90-386-3512-5
Status	Gepubliceerd - 2013

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Lawniczuk, K., Wale, M. J., Szczepanski, P., Piramidowicz, R., Smit, M. K., & Leijtens, X. J. M. (2013). Single contact double -waveguide SOAs in AWG-based lasers fabricated on InP generic photonic integration platform. In X. Leijtens, & D. Pustakhod (editors), Proceedings of the 18th Annual Symposium of the IEEE Photonics Society Benelux Chapter, 25-26 November 2013, Technische Universiteit Eindhoven (blz. 275-278). Eindhoven University of Technology.

Lawniczuk, K. ; Wale, M.J. ; Szczepanski, P. et al. / Single contact double -waveguide SOAs in AWG-based lasers fabricated on InP generic photonic integration platform. Proceedings of the 18th Annual Symposium of the IEEE Photonics Society Benelux Chapter, 25-26 November 2013, Technische Universiteit Eindhoven. redacteur / X. Leijtens ; D. Pustakhod. Eindhoven : Eindhoven University of Technology, 2013. blz. 275-278

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title = "Single contact double -waveguide SOAs in AWG-based lasers fabricated on InP generic photonic integration platform",

abstract = "By implementing SOAs that guide two waveguides through a single contact active section, we can reduce dimensions ofphotonic integrated circuits (Tics.) and decrea,ce the number of electrical contacts of current injection. In this paper we demonstrate linear 4-channel and 8-channel A WG-based lasers that take advantage of such SOAs. This resulted in a reduction of the required number of active regions and contacts by a factor Iwo. Measurements showed that these sources operate with an output power of I in W per A WG-channel and side-mode suppression ratio better than 40 dB. The lasers were fabricated in a multi-project wafer run on an indium phosphide (InP,) based generic photonic integration platform.",

author = "K. Lawniczuk and M.J. Wale and P. Szczepanski and R. Piramidowicz and M.K. Smit and X.J.M. Leijtens",

year = "2013",

language = "English",

isbn = "978-90-386-3512-5",

pages = "275--278",

editor = "X. Leijtens and D. Pustakhod",

booktitle = "Proceedings of the 18th Annual Symposium of the IEEE Photonics Society Benelux Chapter, 25-26 November 2013, Technische Universiteit Eindhoven",

publisher = "Eindhoven University of Technology",

}

Lawniczuk, K, Wale, MJ, Szczepanski, P, Piramidowicz, R, Smit, MK & Leijtens, XJM 2013, Single contact double -waveguide SOAs in AWG-based lasers fabricated on InP generic photonic integration platform. in X Leijtens & D Pustakhod (uitgave), Proceedings of the 18th Annual Symposium of the IEEE Photonics Society Benelux Chapter, 25-26 November 2013, Technische Universiteit Eindhoven. Eindhoven University of Technology, Eindhoven, blz. 275-278.

Single contact double -waveguide SOAs in AWG-based lasers fabricated on InP generic photonic integration platform. / Lawniczuk, K.; Wale, M.J.; Szczepanski, P. et al.
Proceedings of the 18th Annual Symposium of the IEEE Photonics Society Benelux Chapter, 25-26 November 2013, Technische Universiteit Eindhoven. uitgave / X. Leijtens; D. Pustakhod. Eindhoven: Eindhoven University of Technology, 2013. blz. 275-278.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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T1 - Single contact double -waveguide SOAs in AWG-based lasers fabricated on InP generic photonic integration platform

AU - Lawniczuk, K.

AU - Wale, M.J.

AU - Szczepanski, P.

AU - Piramidowicz, R.

AU - Smit, M.K.

AU - Leijtens, X.J.M.

PY - 2013

Y1 - 2013

N2 - By implementing SOAs that guide two waveguides through a single contact active section, we can reduce dimensions ofphotonic integrated circuits (Tics.) and decrea,ce the number of electrical contacts of current injection. In this paper we demonstrate linear 4-channel and 8-channel A WG-based lasers that take advantage of such SOAs. This resulted in a reduction of the required number of active regions and contacts by a factor Iwo. Measurements showed that these sources operate with an output power of I in W per A WG-channel and side-mode suppression ratio better than 40 dB. The lasers were fabricated in a multi-project wafer run on an indium phosphide (InP,) based generic photonic integration platform.

AB - By implementing SOAs that guide two waveguides through a single contact active section, we can reduce dimensions ofphotonic integrated circuits (Tics.) and decrea,ce the number of electrical contacts of current injection. In this paper we demonstrate linear 4-channel and 8-channel A WG-based lasers that take advantage of such SOAs. This resulted in a reduction of the required number of active regions and contacts by a factor Iwo. Measurements showed that these sources operate with an output power of I in W per A WG-channel and side-mode suppression ratio better than 40 dB. The lasers were fabricated in a multi-project wafer run on an indium phosphide (InP,) based generic photonic integration platform.

M3 - Conference contribution

SN - 978-90-386-3512-5

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EP - 278

BT - Proceedings of the 18th Annual Symposium of the IEEE Photonics Society Benelux Chapter, 25-26 November 2013, Technische Universiteit Eindhoven

A2 - Leijtens, X.

A2 - Pustakhod, D.

PB - Eindhoven University of Technology

CY - Eindhoven

ER -

Lawniczuk K, Wale MJ, Szczepanski P, Piramidowicz R, Smit MK , Leijtens XJM. Single contact double -waveguide SOAs in AWG-based lasers fabricated on InP generic photonic integration platform. In Leijtens X, Pustakhod D, redacteurs, Proceedings of the 18th Annual Symposium of the IEEE Photonics Society Benelux Chapter, 25-26 November 2013, Technische Universiteit Eindhoven. Eindhoven: Eindhoven University of Technology. 2013. blz. 275-278

Single contact double -waveguide SOAs in AWG-based lasers fabricated on InP generic photonic integration platform

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