Simulation and design of integrated femtosecond passively mode-locked semiconductor ring lasers including integrated passive pulse shaping components

M.J.R. Heck, E.A.J.M. Bente, Y. Barbarin, D. Lenstra, M.K. Smit

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

21 Citaties (Scopus)

Uittreksel

In this paper, a model is presented for the simulation of integrated passively mode-locked InP-InGaAsP ring laser systems that include active components such as an amplifier and saturable absorber, and passive components that can be frequency dispersive. These dispersive components can have a complex frequency dependence, such as arrayed waveguide gratings (AWGs). The model is a lumped-element model that is used as a design tool for developing integrated femtosecond pulse sources with internal dispersion control. Simulations based on an InP/InGaAsP amplifier and absorber show the possibility of laser designs that are able to generate pulses with pulse durations down to 300 fs in the 1550-nm wavelength range. The designs are based on femtosecond laser systems in bulk and fiber optics that are published in the literature. The femtosecond laser sources presented here can be realized using existing InP-InGaAsP active-passive integration technology.
Originele taal-2Engels
Pagina's (van-tot)265-276
Aantal pagina's12
TijdschriftIEEE Journal of Selected Topics in Quantum Electronics
Volume12
Nummer van het tijdschrift2
DOI's
StatusGepubliceerd - 2006

Vingerafdruk

Pulse shaping
Ring lasers
ring lasers
Laser modes
Ultrashort pulses
semiconductor lasers
Semiconductor materials
absorbers
amplifiers
pulses
lasers
Arrayed waveguide gratings
Saturable absorbers
simulation
Fiber optics
Laser pulses
fiber optics
pulse duration
gratings
optics

Citeer dit

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title = "Simulation and design of integrated femtosecond passively mode-locked semiconductor ring lasers including integrated passive pulse shaping components",
abstract = "In this paper, a model is presented for the simulation of integrated passively mode-locked InP-InGaAsP ring laser systems that include active components such as an amplifier and saturable absorber, and passive components that can be frequency dispersive. These dispersive components can have a complex frequency dependence, such as arrayed waveguide gratings (AWGs). The model is a lumped-element model that is used as a design tool for developing integrated femtosecond pulse sources with internal dispersion control. Simulations based on an InP/InGaAsP amplifier and absorber show the possibility of laser designs that are able to generate pulses with pulse durations down to 300 fs in the 1550-nm wavelength range. The designs are based on femtosecond laser systems in bulk and fiber optics that are published in the literature. The femtosecond laser sources presented here can be realized using existing InP-InGaAsP active-passive integration technology.",
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Simulation and design of integrated femtosecond passively mode-locked semiconductor ring lasers including integrated passive pulse shaping components. / Heck, M.J.R.; Bente, E.A.J.M.; Barbarin, Y.; Lenstra, D.; Smit, M.K.

In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 12, Nr. 2, 2006, blz. 265-276.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

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AU - Heck, M.J.R.

AU - Bente, E.A.J.M.

AU - Barbarin, Y.

AU - Lenstra, D.

AU - Smit, M.K.

PY - 2006

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AB - In this paper, a model is presented for the simulation of integrated passively mode-locked InP-InGaAsP ring laser systems that include active components such as an amplifier and saturable absorber, and passive components that can be frequency dispersive. These dispersive components can have a complex frequency dependence, such as arrayed waveguide gratings (AWGs). The model is a lumped-element model that is used as a design tool for developing integrated femtosecond pulse sources with internal dispersion control. Simulations based on an InP/InGaAsP amplifier and absorber show the possibility of laser designs that are able to generate pulses with pulse durations down to 300 fs in the 1550-nm wavelength range. The designs are based on femtosecond laser systems in bulk and fiber optics that are published in the literature. The femtosecond laser sources presented here can be realized using existing InP-InGaAsP active-passive integration technology.

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