Simplified modeling of optical absorption and nonlinear index change in semiconductors

G. Zhao; J.J.G.M. Tol, van der

Simplified modeling of optical absorption and nonlinear index change in semiconductors

G. Zhao
, J.J.G.M. Tol, van der

Photonic Integration

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Samenvatting

A simplified model of the two-level system is used to show the nonlinear optical behaviors of absorption and change in refractive index. The optical absorption spectrum and the dispersion of index change are calculated by means of the density matrix theory. The dependence of the absorption coefficient and the refractive index change on the optical intensity is shown. The mechanism of nonlinear optical effects is illuminated. Theoretical analysis shows that the nonlinear absorption and index change result from the change of photogenerated carrier population. It has been generalized into the study of nonlinear optical properties in semiconductors.

Originele taal-2	Engels
Titel	proc. 5th Annual Workshop on Semiconductor Advances for Future Electronics 2002
Plaats van productie	Veldhoven, the Netherlands
Pagina's	131-135
Status	Gepubliceerd - 2002
Evenement	conference; SAFE 2002, Veldhoven, the Netherlands; 2002-11-27; 2002-11-28 - Duur: 27 nov. 2002 → 28 nov. 2002

Congres

Congres	conference; SAFE 2002, Veldhoven, the Netherlands; 2002-11-27; 2002-11-28
Periode	27/11/02 → 28/11/02
Ander	SAFE 2002, Veldhoven, the Netherlands

Citeer dit

@inproceedings{2f8187ba1bb44002a0206b62ede86e32,

title = "Simplified modeling of optical absorption and nonlinear index change in semiconductors",

abstract = "A simplified model of the two-level system is used to show the nonlinear optical behaviors of absorption and change in refractive index. The optical absorption spectrum and the dispersion of index change are calculated by means of the density matrix theory. The dependence of the absorption coefficient and the refractive index change on the optical intensity is shown. The mechanism of nonlinear optical effects is illuminated. Theoretical analysis shows that the nonlinear absorption and index change result from the change of photogenerated carrier population. It has been generalized into the study of nonlinear optical properties in semiconductors.",

author = "G. Zhao and \{Tol, van der\}, J.J.G.M.",

year = "2002",

language = "English",

isbn = "90-73461-332",

pages = "131--135",

booktitle = "proc. 5th Annual Workshop on Semiconductor Advances for Future Electronics 2002",

note = "conference; SAFE 2002, Veldhoven, the Netherlands; 2002-11-27; 2002-11-28 ; Conference date: 27-11-2002 Through 28-11-2002",

}

TY - GEN

T1 - Simplified modeling of optical absorption and nonlinear index change in semiconductors

AU - Zhao, G.

AU - Tol, van der, J.J.G.M.

PY - 2002

Y1 - 2002

N2 - A simplified model of the two-level system is used to show the nonlinear optical behaviors of absorption and change in refractive index. The optical absorption spectrum and the dispersion of index change are calculated by means of the density matrix theory. The dependence of the absorption coefficient and the refractive index change on the optical intensity is shown. The mechanism of nonlinear optical effects is illuminated. Theoretical analysis shows that the nonlinear absorption and index change result from the change of photogenerated carrier population. It has been generalized into the study of nonlinear optical properties in semiconductors.

AB - A simplified model of the two-level system is used to show the nonlinear optical behaviors of absorption and change in refractive index. The optical absorption spectrum and the dispersion of index change are calculated by means of the density matrix theory. The dependence of the absorption coefficient and the refractive index change on the optical intensity is shown. The mechanism of nonlinear optical effects is illuminated. Theoretical analysis shows that the nonlinear absorption and index change result from the change of photogenerated carrier population. It has been generalized into the study of nonlinear optical properties in semiconductors.

M3 - Conference contribution

SN - 90-73461-332

SP - 131

EP - 135

BT - proc. 5th Annual Workshop on Semiconductor Advances for Future Electronics 2002

CY - Veldhoven, the Netherlands

T2 - conference; SAFE 2002, Veldhoven, the Netherlands; 2002-11-27; 2002-11-28

Y2 - 27 November 2002 through 28 November 2002

ER -

Simplified modeling of optical absorption and nonlinear index change in semiconductors

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Congres

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