Simple activated transport in ion-implanted silicon:arsenic at temperatures below 0.5 K

R.W. Heijden, van der; G. Chen; A.T.A.M. Waele, de; H.M. Gijsman; F.P.B. Tielen

doi:10.1016/0038-1098(91)90798-Z

Simple activated transport in ion-implanted silicon:arsenic at temperatures below 0.5 K

R.W. Heijden, van der
, G. Chen
, A.T.A.M. Waele, de
, H.M. Gijsman
, F.P.B. Tielen

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

16 Citaten (Scopus)

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The temperature dependence of the resistance of ion-implanted Si:As, with impurity concentration about 10 % below the metal-insulator transition, is measured in the temperature range 0.1–4.2 K. The temperature dependence below 0.5 K is much stronger than expected from the variable range hopping laws and is well described by purely activated behaviour. This points to the existence of a rigid gap at the Fermi level. Possible origins are discussed.

Originele taal-2	Engels
Pagina's (van-tot)	5-8
Tijdschrift	Solid State Communications
Volume	78
Nummer van het tijdschrift	1
DOI's	https://doi.org/10.1016/0038-1098(91)90798-Z
Status	Gepubliceerd - 1991

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10.1016/0038-1098(91)90798-Z

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title = "Simple activated transport in ion-implanted silicon:arsenic at temperatures below 0.5 K",

abstract = "The temperature dependence of the resistance of ion-implanted Si:As, with impurity concentration about 10 \% below the metal-insulator transition, is measured in the temperature range 0.1–4.2 K. The temperature dependence below 0.5 K is much stronger than expected from the variable range hopping laws and is well described by purely activated behaviour. This points to the existence of a rigid gap at the Fermi level. Possible origins are discussed.",

author = "\{Heijden, van der\}, R.W. and G. Chen and \{Waele, de\}, A.T.A.M. and H.M. Gijsman and F.P.B. Tielen",

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T1 - Simple activated transport in ion-implanted silicon:arsenic at temperatures below 0.5 K

AU - Heijden, van der, R.W.

AU - Chen, G.

AU - Waele, de, A.T.A.M.

AU - Gijsman, H.M.

AU - Tielen, F.P.B.

PY - 1991

Y1 - 1991

N2 - The temperature dependence of the resistance of ion-implanted Si:As, with impurity concentration about 10 % below the metal-insulator transition, is measured in the temperature range 0.1–4.2 K. The temperature dependence below 0.5 K is much stronger than expected from the variable range hopping laws and is well described by purely activated behaviour. This points to the existence of a rigid gap at the Fermi level. Possible origins are discussed.

AB - The temperature dependence of the resistance of ion-implanted Si:As, with impurity concentration about 10 % below the metal-insulator transition, is measured in the temperature range 0.1–4.2 K. The temperature dependence below 0.5 K is much stronger than expected from the variable range hopping laws and is well described by purely activated behaviour. This points to the existence of a rigid gap at the Fermi level. Possible origins are discussed.

U2 - 10.1016/0038-1098(91)90798-Z

DO - 10.1016/0038-1098(91)90798-Z

M3 - Article

SN - 0038-1098

VL - 78

SP - 5

EP - 8

JO - Solid State Communications

JF - Solid State Communications

IS - 1

ER -

Simple activated transport in ion-implanted silicon:arsenic at temperatures below 0.5 K

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