Side-wall morphology in reactive ion etching of GaN

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Originele taal-2	Engels
Titel	Proc. 4th Annual Sympsoium of the IEEE/LEOS Benelux Chapter
Pagina's	215-217
Status	Gepubliceerd - 1999
Evenement	4th Annual Symposium of the IEEE/LEOS Benelux Chapter, 1999 - Mons, België Duur: 15 nov. 1999 → 15 nov. 1999

Congres	4th Annual Symposium of the IEEE/LEOS Benelux Chapter, 1999
Land/Regio	België
Stad	Mons
Periode	15/11/99 → 15/11/99
Ander	4th Annual Symposium of the IEEE/LEOS Benelux Chapter, Mons, Belgium, 15 November

Citeer dit

@inproceedings{8a44a01e13a741e0a1dc7e00fe2a102a,

title = "Side-wall morphology in reactive ion etching of GaN",

author = "F. Karouta and B. Jacobs and K. Jacobs and I. Moerman",

year = "1999",

language = "English",

isbn = "2-9600226-0-2",

pages = "215--217",

booktitle = "Proc. 4th Annual Sympsoium of the IEEE/LEOS Benelux Chapter",

note = "4th Annual Symposium of the IEEE/LEOS Benelux Chapter, 1999 ; Conference date: 15-11-1999 Through 15-11-1999",

}

TY - GEN

T1 - Side-wall morphology in reactive ion etching of GaN

AU - Karouta, F.

AU - Jacobs, B.

AU - Jacobs, K.

AU - Moerman, I.

PY - 1999

Y1 - 1999

M3 - Conference contribution

SN - 2-9600226-0-2

SP - 215

EP - 217

BT - Proc. 4th Annual Sympsoium of the IEEE/LEOS Benelux Chapter

T2 - 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, 1999

Y2 - 15 November 1999 through 15 November 1999

ER -