Shape analysis of single and stacked InAs quantum dots at the atomic level by cross-sectional STM

D.M. Bruls, J.W.A.M. Vugs, P.M. Koenraad, M.S. Skolnick, M. Hopkinson, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

We present a study of InAs self-assembled quantum dots in GaAs by cross-sectional scanning tunneling microscopy (X-STM). Our results shows that the dots consist of an JnGaAs alloy and that the indium content increases towards the top. The analysis of the height versus base length relation obtained from cross-sectional images of the dots show that the shape of the dots resembles that of a truncated pyramid with a square base that is oriented along the [100] and [010] directions. Our results about the shape and size agree with the analysis of previous photocurrent measurements on these samples.
Originele taal-2Engels
Titel25th Int. Conf. on the Physics of Semiconductors, 17-22 September 2000, Osaka, Japan
RedacteurenN. Miura, T. Ando
Pagina's359-360
StatusGepubliceerd - 2001
Evenement25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan - Osaka, Japan
Duur: 17 sep 200022 sep 2000

Publicatie series

NaamSpringer Proceedings in Physics
ISSN van geprinte versie0930-8989

Congres

Congres25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan
LandJapan
StadOsaka
Periode17/09/0022/09/00
Ander25th Int. Conf. on the Physics of Semiconductors. Osaka, Japan

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