Separate electron-hole confinement in composite InAsyP 1-y/Ga xIn1-xAs quantum wells

A.Y. Silov; B.N. Aneeshkumar; M.R. Leijs; N.S. Averkiev; P.C.M. Christianen; J.H. Wolter

doi:10.1117/12.513817

Separate electron-hole confinement in composite InAsyP 1-y/Ga xIn1-xAs quantum wells

A.Y. Silov, B.N. Aneeshkumar, M.R. Leijs, N.S. Averkiev, P.C.M. Christianen, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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Composite double qunatum wells made from materials with a type-II band line-up have been grown to realize separate confinement in real space for electrons and holes. We have observed a substantial blue shift of the lowest energy transition in such composite double quantum wells. The photocurrent measurements demonstrate a linear Stark shift due to the separate confinement in real space for electrons and holes. The charge separation is up to 45 Å in the strain balanced InAs0.42P0.58/Ga0.67In0.33As samples. The experimental results agree very well with calculations in the framework of Bir-Pikus strain Hamiltonian.

Originele taal-2	Engels
Titel	Proceedings of the 10th International Symposium on Nanostructures: Physics and Technology : 17 - 21 June 2002, St. Petersburg, Russia
Redacteuren	Z.I. Alferov, L. Esaki
Plaats van productie	Bellingham, Wash
Uitgeverij	SPIE
Pagina's	224-226
ISBN van geprinte versie	0819448249
DOI's	https://doi.org/10.1117/12.513817
Status	Gepubliceerd - 2002
Evenement	conference; International Symposium on Nanostructures: Physics and Technology - Duur: 1 jan. 2002 → …

Publicatie series

Naam	Proceedings of SPIE
Volume	5023
ISSN van geprinte versie	0277-786X

Congres

Congres	conference; International Symposium on Nanostructures: Physics and Technology
Periode	1/01/02 → …
Ander	International Symposium on Nanostructures: Physics and Technology

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Silov, A. Y., Aneeshkumar, B. N., Leijs, M. R., Averkiev, N. S., Christianen, P. C. M., & Wolter, J. H. (2002). Separate electron-hole confinement in composite InAsyP 1-y/Ga xIn1-xAs quantum wells. In Z. I. Alferov, & L. Esaki (editors), Proceedings of the 10th International Symposium on Nanostructures: Physics and Technology : 17 - 21 June 2002, St. Petersburg, Russia (blz. 224-226). (Proceedings of SPIE; Vol. 5023). SPIE. https://doi.org/10.1117/12.513817

Silov, A.Y. ; Aneeshkumar, B.N. ; Leijs, M.R. et al. / Separate electron-hole confinement in composite InAsyP 1-y/Ga xIn1-xAs quantum wells. Proceedings of the 10th International Symposium on Nanostructures: Physics and Technology : 17 - 21 June 2002, St. Petersburg, Russia. redacteur / Z.I. Alferov ; L. Esaki. Bellingham, Wash : SPIE, 2002. blz. 224-226 (Proceedings of SPIE).

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title = "Separate electron-hole confinement in composite InAsyP 1-y/Ga xIn1-xAs quantum wells",

abstract = "Composite double qunatum wells made from materials with a type-II band line-up have been grown to realize separate confinement in real space for electrons and holes. We have observed a substantial blue shift of the lowest energy transition in such composite double quantum wells. The photocurrent measurements demonstrate a linear Stark shift due to the separate confinement in real space for electrons and holes. The charge separation is up to 45 {\AA} in the strain balanced InAs0.42P0.58/Ga0.67In0.33As samples. The experimental results agree very well with calculations in the framework of Bir-Pikus strain Hamiltonian.",

author = "A.Y. Silov and B.N. Aneeshkumar and M.R. Leijs and N.S. Averkiev and P.C.M. Christianen and J.H. Wolter",

year = "2002",

doi = "10.1117/12.513817",

language = "English",

isbn = "0819448249",

series = "Proceedings of SPIE",

publisher = "SPIE",

pages = "224--226",

editor = "Z.I. Alferov and L. Esaki",

booktitle = "Proceedings of the 10th International Symposium on Nanostructures: Physics and Technology : 17 - 21 June 2002, St. Petersburg, Russia",

address = "United States",

note = "conference; International Symposium on Nanostructures: Physics and Technology ; Conference date: 01-01-2002",

}

Silov, AY, Aneeshkumar, BN, Leijs, MR, Averkiev, NS, Christianen, PCM & Wolter, JH 2002, Separate electron-hole confinement in composite InAsyP 1-y/Ga xIn1-xAs quantum wells. in ZI Alferov & L Esaki (uitgave), Proceedings of the 10th International Symposium on Nanostructures: Physics and Technology : 17 - 21 June 2002, St. Petersburg, Russia. Proceedings of SPIE, vol. 5023, SPIE, Bellingham, Wash, blz. 224-226, conference; International Symposium on Nanostructures: Physics and Technology, 1/01/02. https://doi.org/10.1117/12.513817

Separate electron-hole confinement in composite InAsyP 1-y/Ga xIn1-xAs quantum wells. / Silov, A.Y.; Aneeshkumar, B.N.; Leijs, M.R. et al.
Proceedings of the 10th International Symposium on Nanostructures: Physics and Technology : 17 - 21 June 2002, St. Petersburg, Russia. uitgave / Z.I. Alferov; L. Esaki. Bellingham, Wash: SPIE, 2002. blz. 224-226 (Proceedings of SPIE; Vol. 5023).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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T1 - Separate electron-hole confinement in composite InAsyP 1-y/Ga xIn1-xAs quantum wells

AU - Silov, A.Y.

AU - Aneeshkumar, B.N.

AU - Leijs, M.R.

AU - Averkiev, N.S.

AU - Christianen, P.C.M.

AU - Wolter, J.H.

PY - 2002

Y1 - 2002

N2 - Composite double qunatum wells made from materials with a type-II band line-up have been grown to realize separate confinement in real space for electrons and holes. We have observed a substantial blue shift of the lowest energy transition in such composite double quantum wells. The photocurrent measurements demonstrate a linear Stark shift due to the separate confinement in real space for electrons and holes. The charge separation is up to 45 Å in the strain balanced InAs0.42P0.58/Ga0.67In0.33As samples. The experimental results agree very well with calculations in the framework of Bir-Pikus strain Hamiltonian.

AB - Composite double qunatum wells made from materials with a type-II band line-up have been grown to realize separate confinement in real space for electrons and holes. We have observed a substantial blue shift of the lowest energy transition in such composite double quantum wells. The photocurrent measurements demonstrate a linear Stark shift due to the separate confinement in real space for electrons and holes. The charge separation is up to 45 Å in the strain balanced InAs0.42P0.58/Ga0.67In0.33As samples. The experimental results agree very well with calculations in the framework of Bir-Pikus strain Hamiltonian.

U2 - 10.1117/12.513817

DO - 10.1117/12.513817

M3 - Conference contribution

SN - 0819448249

T3 - Proceedings of SPIE

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EP - 226

BT - Proceedings of the 10th International Symposium on Nanostructures: Physics and Technology : 17 - 21 June 2002, St. Petersburg, Russia

A2 - Alferov, Z.I.

A2 - Esaki, L.

PB - SPIE

CY - Bellingham, Wash

T2 - conference; International Symposium on Nanostructures: Physics and Technology

Y2 - 1 January 2002

ER -

Silov AY, Aneeshkumar BN, Leijs MR, Averkiev NS, Christianen PCM, Wolter JH. Separate electron-hole confinement in composite InAsyP 1-y/Ga xIn1-xAs quantum wells. In Alferov ZI, Esaki L, redacteurs, Proceedings of the 10th International Symposium on Nanostructures: Physics and Technology : 17 - 21 June 2002, St. Petersburg, Russia. Bellingham, Wash: SPIE. 2002. blz. 224-226. (Proceedings of SPIE). doi: 10.1117/12.513817

Separate electron-hole confinement in composite InAsyP 1-y/Ga xIn1-xAs quantum wells

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