Semiconductor optical amplifier gain anisotropy: confinement factor against material gain

W. Wang, K. Allaart, D. Lenstra

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

13 Citaties (Scopus)

Uittreksel

It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy, Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.

Originele taal-2Engels
Pagina's (van-tot)1602-1603
Aantal pagina's2
TijdschriftElectronics Letters
Volume40
Nummer van het tijdschrift25
DOI's
StatusGepubliceerd - 9 dec 2004

Vingerafdruk

Semiconductor optical amplifiers
Anisotropy
Light polarization
Pumps

Citeer dit

@article{df3ecab667414de4830287a339c559d5,
title = "Semiconductor optical amplifier gain anisotropy: confinement factor against material gain",
abstract = "It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy, Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.",
author = "W. Wang and K. Allaart and D. Lenstra",
year = "2004",
month = "12",
day = "9",
doi = "10.1049/el:20046945",
language = "English",
volume = "40",
pages = "1602--1603",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology (IET)",
number = "25",

}

Semiconductor optical amplifier gain anisotropy : confinement factor against material gain. / Wang, W.; Allaart, K.; Lenstra, D.

In: Electronics Letters, Vol. 40, Nr. 25, 09.12.2004, blz. 1602-1603.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

T1 - Semiconductor optical amplifier gain anisotropy

T2 - confinement factor against material gain

AU - Wang, W.

AU - Allaart, K.

AU - Lenstra, D.

PY - 2004/12/9

Y1 - 2004/12/9

N2 - It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy, Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.

AB - It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy, Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.

UR - http://www.scopus.com/inward/record.url?scp=11144269041&partnerID=8YFLogxK

U2 - 10.1049/el:20046945

DO - 10.1049/el:20046945

M3 - Article

AN - SCOPUS:11144269041

VL - 40

SP - 1602

EP - 1603

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 25

ER -