Semiconductive behavior of Sb doped SnO2 thin films

K.-O. Grosse-Holz, J.F.M. Cillessen, M.W.J. Prins, P.W.M. Blom, R.M. Wolf, L.F. Feiner, R. Waser

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Uittreksel

Sb doped Sn02 has been deposited on polished ceramic A1203 substrates by Pulsed Laser Deposition. Conductivity, charge carrier density and mobility of these thin films have been meas ured as a function of temperature. A model for the electrical properties of the films is proposed. Since Sb doped Sn02 is a transparent, high mobility material, it is shown that it can be used as channel material for an all-oxide thin film transparent field-effect transistor with a linear dielectric.
Originele taal-2Engels
TitelEpitaxial oxide thin films II : symposium held November 26 - 30, 1995, Boston, Massachusetts, U.S.A
RedacteurenJ.S. Speck, D.K. Fork, R.M. Wolf, xx et al.
Plaats van productiePittsburgh
UitgeverijMaterials Research Society
Pagina's67-72
ISBN van geprinte versie1-55899-304-5
StatusGepubliceerd - 1996

Publicatie series

NaamMaterials Research Society Symposium Proceedings
Volume401
ISSN van geprinte versie0272-9172

Vingerafdruk

thin films
carrier mobility
pulsed laser deposition
charge carriers
field effect transistors
electrical properties
ceramics
conductivity
oxides
temperature

Citeer dit

Grosse-Holz, K-O., Cillessen, J. F. M., Prins, M. W. J., Blom, P. W. M., Wolf, R. M., Feiner, L. F., & Waser, R. (1996). Semiconductive behavior of Sb doped SnO2 thin films. In J. S. Speck, D. K. Fork, R. M. Wolf, & X. et al. (editors), Epitaxial oxide thin films II : symposium held November 26 - 30, 1995, Boston, Massachusetts, U.S.A (blz. 67-72). (Materials Research Society Symposium Proceedings; Vol. 401). Pittsburgh: Materials Research Society.
Grosse-Holz, K.-O. ; Cillessen, J.F.M. ; Prins, M.W.J. ; Blom, P.W.M. ; Wolf, R.M. ; Feiner, L.F. ; Waser, R. / Semiconductive behavior of Sb doped SnO2 thin films. Epitaxial oxide thin films II : symposium held November 26 - 30, 1995, Boston, Massachusetts, U.S.A. redacteur / J.S. Speck ; D.K. Fork ; R.M. Wolf ; xx et al. Pittsburgh : Materials Research Society, 1996. blz. 67-72 (Materials Research Society Symposium Proceedings).
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abstract = "Sb doped Sn02 has been deposited on polished ceramic A1203 substrates by Pulsed Laser Deposition. Conductivity, charge carrier density and mobility of these thin films have been meas ured as a function of temperature. A model for the electrical properties of the films is proposed. Since Sb doped Sn02 is a transparent, high mobility material, it is shown that it can be used as channel material for an all-oxide thin film transparent field-effect transistor with a linear dielectric.",
author = "K.-O. Grosse-Holz and J.F.M. Cillessen and M.W.J. Prins and P.W.M. Blom and R.M. Wolf and L.F. Feiner and R. Waser",
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Grosse-Holz, K-O, Cillessen, JFM, Prins, MWJ, Blom, PWM, Wolf, RM, Feiner, LF & Waser, R 1996, Semiconductive behavior of Sb doped SnO2 thin films. in JS Speck, DK Fork, RM Wolf & X et al. (redactie), Epitaxial oxide thin films II : symposium held November 26 - 30, 1995, Boston, Massachusetts, U.S.A. Materials Research Society Symposium Proceedings, vol. 401, Materials Research Society, Pittsburgh, blz. 67-72.

Semiconductive behavior of Sb doped SnO2 thin films. / Grosse-Holz, K.-O.; Cillessen, J.F.M.; Prins, M.W.J.; Blom, P.W.M.; Wolf, R.M.; Feiner, L.F.; Waser, R.

Epitaxial oxide thin films II : symposium held November 26 - 30, 1995, Boston, Massachusetts, U.S.A. redactie / J.S. Speck; D.K. Fork; R.M. Wolf; xx et al. Pittsburgh : Materials Research Society, 1996. blz. 67-72 (Materials Research Society Symposium Proceedings; Vol. 401).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

TY - GEN

T1 - Semiconductive behavior of Sb doped SnO2 thin films

AU - Grosse-Holz, K.-O.

AU - Cillessen, J.F.M.

AU - Prins, M.W.J.

AU - Blom, P.W.M.

AU - Wolf, R.M.

AU - Feiner, L.F.

AU - Waser, R.

PY - 1996

Y1 - 1996

N2 - Sb doped Sn02 has been deposited on polished ceramic A1203 substrates by Pulsed Laser Deposition. Conductivity, charge carrier density and mobility of these thin films have been meas ured as a function of temperature. A model for the electrical properties of the films is proposed. Since Sb doped Sn02 is a transparent, high mobility material, it is shown that it can be used as channel material for an all-oxide thin film transparent field-effect transistor with a linear dielectric.

AB - Sb doped Sn02 has been deposited on polished ceramic A1203 substrates by Pulsed Laser Deposition. Conductivity, charge carrier density and mobility of these thin films have been meas ured as a function of temperature. A model for the electrical properties of the films is proposed. Since Sb doped Sn02 is a transparent, high mobility material, it is shown that it can be used as channel material for an all-oxide thin film transparent field-effect transistor with a linear dielectric.

M3 - Conference contribution

SN - 1-55899-304-5

T3 - Materials Research Society Symposium Proceedings

SP - 67

EP - 72

BT - Epitaxial oxide thin films II : symposium held November 26 - 30, 1995, Boston, Massachusetts, U.S.A

A2 - Speck, J.S.

A2 - Fork, D.K.

A2 - Wolf, R.M.

A2 - et al., xx

PB - Materials Research Society

CY - Pittsburgh

ER -

Grosse-Holz K-O, Cillessen JFM, Prins MWJ, Blom PWM, Wolf RM, Feiner LF et al. Semiconductive behavior of Sb doped SnO2 thin films. In Speck JS, Fork DK, Wolf RM, et al. X, redacteurs, Epitaxial oxide thin films II : symposium held November 26 - 30, 1995, Boston, Massachusetts, U.S.A. Pittsburgh: Materials Research Society. 1996. blz. 67-72. (Materials Research Society Symposium Proceedings).