Self-organized strain engineering on GaAs (311)B : template formation for quantum dot nucleation control

Q. Gong, R. Nötzel, G.J. Hamhuis, T.J. Eijkemans, J.H. Wolter

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

10 Citaten (Scopus)
115 Downloads (Pure)

Samenvatting

A matrix of closely packed cells develops during molecular-beam epitaxy of In/sub 0.35/Ga/sub 0.65/As on GaAs (311)B, due to strain-driven growth instability. The established lateral strain distribution generates a unique template that controls the nucleation and growth of InAs quantum dots (QDs). The QDs exhibit pronounced improvement of the structural and optical properties with efficient carrier transfer from the template. Thus, self-organization of a two-dimensionally connected quantum dot network is demonstrated
Originele taal-2Engels
Pagina's (van-tot)3254-3256
TijdschriftApplied Physics Letters
Volume81
Nummer van het tijdschrift17
DOI's
StatusGepubliceerd - 2002

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