Self-assembly of GaAs quantum wires grown on (311)A substrates by droplet epitaxy

M. Jo; J.G. Keizer; T. Mano; P.M. Koenraad; K. Sakoda

doi:10.1143/APEX.4.055501

Self-assembly of GaAs quantum wires grown on (311)A substrates by droplet epitaxy

M. Jo, J.G. Keizer, T. Mano, P.M. Koenraad, K. Sakoda

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

7 Citaten (Scopus)

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We report the formation of GaAs quantum wires (QWRs) on (311)A substrates by droplet epitaxy. High-density quantum dots coalesce to form wires oriented along the [233] direction as a result of atom diffusion triggered by thermal annealing. Luminescence from the QWRs is significantly polarized parallel to the wire direction, which would result in higher gain in lasers that use cleaved (011) surfaces as Fabry–Pérot mirrors. Lasing is obtained for a GaAs/AlGaAs QWR laser diode with fivefold-stacked QWR layers under pulsed operation at a low temperature.

Originele taal-2	Engels
Artikelnummer	055501
Pagina's (van-tot)	055501-1/3
Aantal pagina's	3
Tijdschrift	Applied Physics Express
Volume	4
DOI's	https://doi.org/10.1143/APEX.4.055501
Status	Gepubliceerd - 2011

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10.1143/APEX.4.055501

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title = "Self-assembly of GaAs quantum wires grown on (311)A substrates by droplet epitaxy",

abstract = "We report the formation of GaAs quantum wires (QWRs) on (311)A substrates by droplet epitaxy. High-density quantum dots coalesce to form wires oriented along the [233] direction as a result of atom diffusion triggered by thermal annealing. Luminescence from the QWRs is significantly polarized parallel to the wire direction, which would result in higher gain in lasers that use cleaved (011) surfaces as Fabry–P{\'e}rot mirrors. Lasing is obtained for a GaAs/AlGaAs QWR laser diode with fivefold-stacked QWR layers under pulsed operation at a low temperature.",

author = "M. Jo and J.G. Keizer and T. Mano and P.M. Koenraad and K. Sakoda",

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AU - Keizer, J.G.

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AB - We report the formation of GaAs quantum wires (QWRs) on (311)A substrates by droplet epitaxy. High-density quantum dots coalesce to form wires oriented along the [233] direction as a result of atom diffusion triggered by thermal annealing. Luminescence from the QWRs is significantly polarized parallel to the wire direction, which would result in higher gain in lasers that use cleaved (011) surfaces as Fabry–Pérot mirrors. Lasing is obtained for a GaAs/AlGaAs QWR laser diode with fivefold-stacked QWR layers under pulsed operation at a low temperature.

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DO - 10.1143/APEX.4.055501

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SN - 1882-0778

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Self-assembly of GaAs quantum wires grown on (311)A substrates by droplet epitaxy

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