Selective area chemical beam epitaxy of (Ga,In)(As,P) structures

C.A. Verschuren

Onderzoeksoutput: Scriptie › Dissertatie 1 (Onderzoek TU/e / Promotie TU/e)

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Originele taal-2	Engels
Kwalificatie	Doctor in de Filosofie
Toekennende instantie	Applied Physics and Science Education
Begeleider(s)/adviseur	Wolter, Joachim, Promotor Schram, Daan C., Promotor Leijs, Maarten, Co-Promotor
Datum van toekenning	22 nov. 1999
Plaats van publicatie	Eindhoven
Uitgever	Technische Universiteit Eindhoven
Gedrukte ISBN's	90-386-0917-5
DOI's	https://doi.org/10.6100/IR527467
Status	Gepubliceerd - 1999

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@phdthesis{eb2274c713d84a478f985ca7a6127247,

title = "Selective area chemical beam epitaxy of (Ga,In)(As,P) structures",

author = "C.A. Verschuren",

year = "1999",

doi = "10.6100/IR527467",

language = "English",

isbn = "90-386-0917-5",

publisher = "Technische Universiteit Eindhoven",

type = "Phd Thesis 1 (Research TU/e / Graduation TU/e)",

school = "Applied Physics and Science Education",

}