Secondary electron emission influenced by oxidation on the aluminum surface: The roles of the chemisorbed oxygen and the oxide layer

Jiangtao Li, Bart Hoekstra, Zhen Bin Wang, Jie Qiu, Yi Kang Pu

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Samenvatting

A relationship between the apparent secondary electron yield (gse) and the oxygen coverage/oxide layer thickness on an aluminum cathode is obtained in an experiment under a controlled environment. The apparent secondary electron yield (gse) is deduced from the breakdown voltage between two parallel plate electrodes in a 360 mTorr argon environment using a simple Townsend breakdown model with the assumption that the variation of the apparent secondary electron yield is dominated by the variation of the argon ion induced processes. The oxygen coverage/oxide layer thickness on the aluminum cathode is measured by a semi in situ X-ray photoemission spectroscopy equipment which is directly attached to the discharge chamber. It is found that three phases exist: (1) in the monomonolayer regime, as the oxygen coverage increases from 0 to 0.3, gse decreases by nearly 40%, (2) as the oxygen coverage increases from 0.3 to 1, gse keeps nearly constant, (3) as the oxide layer thickness increases from about 0.3 nm to about 1.1 nm, gse increases by 150%. We propose that, in the submonolayer regime, the chemisorbed oxygen on the aluminum surface causes the decrease of gse by creating a local potential barrier, which reduces the Auger neutralization rate and the energy gained by the Auger electrons. In the multilayer regime, as the oxide layer grows in thickness, there are three proposed mechanisms which cause the increase of gse: (1) the work function decreases; (2) resonance neutralization and Auger de-excitation may exist. This is served as another channel for secondary electron production; (3) the kinetic energy of Auger electrons is increased on average, leading to a higher probability for electrons to overcome the surface potential barrier.

Originele taal-2Engels
Artikelnummer044002
TijdschriftPlasma Sources Science and Technology
Volume27
Nummer van het tijdschrift4
DOI's
StatusGepubliceerd - 10 apr 2018

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