Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films

Emma Coleman; Scott Monaghan; Farzan Gity; Gioele Mirabelli; Ray Duffy; Brendan Sheehan; Shashank Balasubramanyam; Ageeth A. Bol; Paul Hurley

doi:10.1063/5.0151592

Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS₂ thin films

Emma Coleman (Corresponding author)
, Scott Monaghan
, Farzan Gity
, Gioele Mirabelli
, Ray Duffy
, Brendan Sheehan
, Shashank Balasubramanyam
, Ageeth A. Bol
, Paul Hurley

Plasma & Materials Processing

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

4 Citaten (Scopus)

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Samenvatting

In this work, we investigate the physical and electrical properties of WS₂ thin films grown by a plasma-enhanced atomic layer deposition process, both before and after device fabrication. The WS₂ films were deposited on thermally oxidized silicon substrates using the W(NMe₂)₂(NtBu)₂ precursor and a H₂S plasma at 450 °C. The WS₂ films were approximately 8 nm thick, measured from high-resolution cross-sectional transmission electron imaging, and generally exhibited the desired horizontal basal-plane orientation of the WS₂ layers to the SiO₂ surface. Hall analysis revealed a p-type behavior with a carrier concentration of 1.31 × 10¹⁷ cm⁻³. Temperature-dependent electrical analysis of circular transfer length method test structures, with Ni/Au contacts, yielded the activation energy (E_a) of both the specific contact resistivity and the WS₂ resistivity as 100 and 91 meV, respectively. The similarity of these two values indicates that the characteristics of both are dominated by the temperature dependence of the WS₂ hole concentration. Change in the material, such as in sheet resistance, due to device fabrication is attributed to the chemicals and thermal treatments associated with resist spinning and baking, ambient and UV exposure, metal deposition, and metal lift off for contact pad formation.

Originele taal-2	Engels
Artikelnummer	011901
Aantal pagina's	6
Tijdschrift	Applied Physics Letters
Volume	123
Nummer van het tijdschrift	1
DOI's	https://doi.org/10.1063/5.0151592
Status	Gepubliceerd - 3 jul. 2023

Bibliografische nota

Funding Information:
This work was supported by the European Commission through project ASCENT+: Access to European Infrastructure for Nanoelectronics, funded under H2020 grant 871130, and the financial support of Science Foundation Ireland through the AMBER 2 (12/RC/2278_P2), European Research Council (Grant Agreement No. 648787-ALDof2DTMDs).

Financiering

This work was supported by the European Commission through project ASCENT+: Access to European Infrastructure for Nanoelectronics, funded under H2020 grant 871130, and the financial support of Science Foundation Ireland through the AMBER 2 (12/RC/2278_P2), European Research Council (Grant Agreement No. 648787-ALDof2DTMDs).

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10.1063/5.0151592

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title = "Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films",

abstract = "In this work, we investigate the physical and electrical properties of WS2 thin films grown by a plasma-enhanced atomic layer deposition process, both before and after device fabrication. The WS2 films were deposited on thermally oxidized silicon substrates using the W(NMe2)2(NtBu)2 precursor and a H2S plasma at 450 °C. The WS2 films were approximately 8 nm thick, measured from high-resolution cross-sectional transmission electron imaging, and generally exhibited the desired horizontal basal-plane orientation of the WS2 layers to the SiO2 surface. Hall analysis revealed a p-type behavior with a carrier concentration of 1.31 × 1017 cm−3. Temperature-dependent electrical analysis of circular transfer length method test structures, with Ni/Au contacts, yielded the activation energy (Ea) of both the specific contact resistivity and the WS2 resistivity as 100 and 91 meV, respectively. The similarity of these two values indicates that the characteristics of both are dominated by the temperature dependence of the WS2 hole concentration. Change in the material, such as in sheet resistance, due to device fabrication is attributed to the chemicals and thermal treatments associated with resist spinning and baking, ambient and UV exposure, metal deposition, and metal lift off for contact pad formation.",

author = "Emma Coleman and Scott Monaghan and Farzan Gity and Gioele Mirabelli and Ray Duffy and Brendan Sheehan and Shashank Balasubramanyam and Bol, \{Ageeth A.\} and Paul Hurley",

note = "Funding Information: This work was supported by the European Commission through project ASCENT+: Access to European Infrastructure for Nanoelectronics, funded under H2020 grant 871130, and the financial support of Science Foundation Ireland through the AMBER 2 (12/RC/2278\_P2), European Research Council (Grant Agreement No. 648787-ALDof2DTMDs). ",

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AU - Coleman, Emma

AU - Monaghan, Scott

AU - Gity, Farzan

AU - Mirabelli, Gioele

AU - Duffy, Ray

AU - Sheehan, Brendan

AU - Balasubramanyam, Shashank

AU - Bol, Ageeth A.

AU - Hurley, Paul

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N2 - In this work, we investigate the physical and electrical properties of WS2 thin films grown by a plasma-enhanced atomic layer deposition process, both before and after device fabrication. The WS2 films were deposited on thermally oxidized silicon substrates using the W(NMe2)2(NtBu)2 precursor and a H2S plasma at 450 °C. The WS2 films were approximately 8 nm thick, measured from high-resolution cross-sectional transmission electron imaging, and generally exhibited the desired horizontal basal-plane orientation of the WS2 layers to the SiO2 surface. Hall analysis revealed a p-type behavior with a carrier concentration of 1.31 × 1017 cm−3. Temperature-dependent electrical analysis of circular transfer length method test structures, with Ni/Au contacts, yielded the activation energy (Ea) of both the specific contact resistivity and the WS2 resistivity as 100 and 91 meV, respectively. The similarity of these two values indicates that the characteristics of both are dominated by the temperature dependence of the WS2 hole concentration. Change in the material, such as in sheet resistance, due to device fabrication is attributed to the chemicals and thermal treatments associated with resist spinning and baking, ambient and UV exposure, metal deposition, and metal lift off for contact pad formation.

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