S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity

Yu Wang, Srivathsa Bhat, Timo Aalto, Nicola Calabretta

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

2 Downloads (Pure)

Samenvatting

We fabricated and assessed a nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform. The device has 0.9dB insertion loss, 19dB average extinction ration, <0.7dB polarization dependent loss and 6-ns switching time.

Originele taal-2Engels
Titel2023 Opto-Electronics and Communications Conference, OECC 2023
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's4
ISBN van elektronische versie978-1-6654-6213-6
DOI's
StatusGepubliceerd - 14 aug. 2023
Evenement2023 Opto-Electronics and Communications Conference, OECC 2023 - Shanghai, China
Duur: 2 jul. 20236 jul. 2023

Congres

Congres2023 Opto-Electronics and Communications Conference, OECC 2023
Land/RegioChina
StadShanghai
Periode2/07/236/07/23

Financiering

ACKNOWLEDGMENT This work has been partially supported by the EU Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement 814276 and the EU B5G-OPEN grant agreement 101016663. And the work is part of the Academy of Finland Flagship Programme, Photonics Research and Innovation (PREIN), decisions 320168 and 346545.

FinanciersFinanciernummer
H2020 Marie Skłodowska-Curie Actions101016663, 814276
Horizon 2020

    Vingerafdruk

    Duik in de onderzoeksthema's van 'S- and C-band nanosecond 1×2 plasma dispersion 3-μm silicon MZI switch with low polarization sensitivity'. Samen vormen ze een unieke vingerafdruk.

    Citeer dit