Ruggedness improvement by protection

A. Bezooijen, van, A.J.M. Graauw, de, L.C.H. Ruijs, S. Pramm, C. Chanlo, H.J. Dolle, ten, F.E. van Straten, R. Mahmoudi, A.H.M. Roermund, van

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

1 Downloads (Pure)

Samenvatting

Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak voltage and die temperature to limit the output power once a threshold level is crossed. For a supply voltage of 5 V and a nominal output power of 2W, no breakdown is observed for a VSWR of 10 over all phases. For a VSWR of 4 and worst case mismatch phase the maximum die temperature is reduced from 143degC to 112degC when the output power is adaptively reduced from 32.1 dBm to 27.7 dBm
Originele taal-2Engels
TitelProceedings of the Bipolar/BiCMOS Circuits and Technology Meeting 2006 (BCTM 2006)
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's275-278
ISBN van geprinte versie1-4244-0459-2
DOI's
StatusGepubliceerd - 2006
Evenement2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands - Maastricht, Nederland
Duur: 8 okt. 200610 okt. 2006

Congres

Congres2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands
Verkorte titelBCTM 2006
Land/RegioNederland
StadMaastricht
Periode8/10/0610/10/06
AnderIEEE 2006 Bipolar, BiCMOS Circuits and Technology Meeting BCTM 2006)

Vingerafdruk

Duik in de onderzoeksthema's van 'Ruggedness improvement by protection'. Samen vormen ze een unieke vingerafdruk.

Citeer dit