Room-temperature atomic layer deposition of platinum

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Plasma-assisted atomic layer deposition (ALD) processes were developed for the deposition of platinum films at room temperature. High-quality, virtually pure films with a resistivity of 18–24 µO cm were obtained for processes consisting of MeCpPtMe3 dosing, O2 plasma exposure, and H2 gas or H2 plasma exposure. The H2 pulses were used to reduce the PtOx that is otherwise deposited at low substrate temperatures. It is shown that the processes enable the deposition of Pt on polymer, textile, and paper substrates, which is a significant result as it demonstrates the broad application range of Pt ALD, including applications involving temperature-sensitive materials.
Originele taal-2Engels
Pagina's (van-tot)1769-1774
Aantal pagina's6
TijdschriftChemistry of Materials
Volume25
Nummer van het tijdschrift9
DOI's
StatusGepubliceerd - 2013

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