Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3

N.M. Terlinden, G. Dingemans, M.C.M. Sanden, van de, W.M.M. Kessels

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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Al2O3 synthesized by plasma-assisted atomic layer deposition yields excellent surface passivation of crystalline silicon (c-Si) for films down to ~ 5 nm in thickness. Optical second-harmonic generation was employed to distinguish between the influence of field-effect passivation and chemical passivation through the measurement of the electric field in the c-Si space-charge region. It is demonstrated that this electric field—and hence the negative fixed charge density—is virtually unaffected by the Al2O3 thickness between 2 and 20 nm indicating that a decrease in chemical passivation causes the reduced passivation performance for
Originele taal-2Engels
Artikelnummer112101
Pagina's (van-tot)112101-1/3
Aantal pagina's3
TijdschriftApplied Physics Letters
Volume96
Nummer van het tijdschrift11
DOI's
StatusGepubliceerd - 2010

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