Resistive switching in nanostructured thin films

H. Silva; H.L. Gomes; Y.G. Pogorelov; P. Stallinga; D.M. Leeuw, de; J.P. Araujo; J.B. Sousa; S.C.J. Meskers; G. Kakazei; S. Cardoso; P.P. Freitas

doi:10.1063/1.3134484

Resistive switching in nanostructured thin films

H. Silva, H.L. Gomes, Y.G. Pogorelov, P. Stallinga, D.M. Leeuw, de, J.P. Araujo, J.B. Sousa, S.C.J. Meskers, G. Kakazei, S. Cardoso, P.P. Freitas

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.

Originele taal-2	Engels
Artikelnummer	202107
Pagina's (van-tot)	202107-1/3
Tijdschrift	Applied Physics Letters
Volume	94
Nummer van het tijdschrift	20
DOI's	https://doi.org/10.1063/1.3134484
Status	Gepubliceerd - 2009

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abstract = "Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.",

author = "H. Silva and H.L. Gomes and Y.G. Pogorelov and P. Stallinga and {Leeuw, de}, D.M. and J.P. Araujo and J.B. Sousa and S.C.J. Meskers and G. Kakazei and S. Cardoso and P.P. Freitas",

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AU - Silva, H.

AU - Gomes, H.L.

AU - Pogorelov, Y.G.

AU - Stallinga, P.

AU - Leeuw, de, D.M.

AU - Araujo, J.P.

AU - Sousa, J.B.

AU - Meskers, S.C.J.

AU - Kakazei, G.

AU - Cardoso, S.

AU - Freitas, P.P.

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AB - Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.

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Resistive switching in nanostructured thin films

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