Remote silane plasma chemistry effects and their correlation with a-Si:H film properties

W.M.M. Kessels, A.H.M. Smets, B.A. Korevaar, G.J. Adriaenssens, M.C.M. Van De Sanden, D.C. Schram

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

15 Citaten (Scopus)
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Samenvatting

A remote silane plasma, capable of depositing solar grade a-Si:H at a rate of 10 nm/s and with an up to ten times higher hole drift mobility than standard a-Si:H, has been investigated by means of several plasma diagnostics. The creation of the different reactive species in the plasma and their contribution to film growth has been analyzed and is correlated with the film properties obtained under various conditions. Furthermore, the first results on a n-i-p solar cell with the intrinsic a-Si:H film deposited by this remote plasma are presented.

Originele taal-2Engels
Titel Amorphous and heterogeneous silicon thin films : fundamentals to devices - 1999 : symposium held April 5-9, 1999, San Francisco, California, U.S.A.
RedacteurenH.M. Branz
Plaats van productieWarrendale
UitgeverijMaterials Research Society
Pagina's25-30
Aantal pagina's6
ISBN van geprinte versie1-55899-464-5
StatusGepubliceerd - 1 dec 1999
Evenement1999 Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices Symposium - San Francisco, CA, USA, Verenigde Staten van Amerika
Duur: 5 apr 19999 apr 1999

Publicatie series

NaamMaterials Research Society Symposium - Proceedings
Volume557
ISSN van geprinte versie0272-9172

Congres

Congres1999 Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices Symposium
LandVerenigde Staten van Amerika
StadSan Francisco, CA, USA
Periode5/04/999/04/99
AnderSpring Meeting. Materials Research Society (MRS) ; 1999 (San Francisco, Calif.) : 1999.04.05-09

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