Platinum and platinum oxide films were deposited using thermal and remote plasma ALD. The combination of MeCpPtMe3 precursor and O2 gas or a short (0.5 s) O2 plasma exposure resulted in high purity, low-resistivity (15 microOhm cm), high-density (21 g/cm3), cubic platinum films. The combination of MeCpPtMe3 precursor with a longer (5 s) O2 plasma exposure resulted in semi-conductive PtO2 films with a band gap of ~1.5 eV. The long nucleation delay observed with the thermal process could be overcome by using the remote plasma process where atomic oxygen is provided from the gas phase. The ALD process dependence on substrate temperature was investigated, where both the thermal and the remote plasma Pt process revealed a temperature window from 200 C to 300 C and the remote plasma PtO2 process had a temperature window from 100 C to 300 C.
|ISSN van geprinte versie||1938-6737|
|Congres||4th Atomic Layer Deposition Application Symposium|
|Land||Verenigde Staten van Amerika|
|Periode||12/10/07 → 17/10/08|
|Ander||214th ECS meeting; 4th Atomic layer depsoition application symposium ; Honolulu,HI, October 12-17 2008|