Remote plasma and thermal ALD of platinum and platinum oxide films

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Samenvatting

Platinum and platinum oxide films were deposited using thermal and remote plasma ALD. The combination of MeCpPtMe3 precursor and O2 gas or a short (0.5 s) O2 plasma exposure resulted in high purity, low-resistivity (15 microOhm cm), high-density (21 g/cm3), cubic platinum films. The combination of MeCpPtMe3 precursor with a longer (5 s) O2 plasma exposure resulted in semi-conductive PtO2 films with a band gap of ~1.5 eV. The long nucleation delay observed with the thermal process could be overcome by using the remote plasma process where atomic oxygen is provided from the gas phase. The ALD process dependence on substrate temperature was investigated, where both the thermal and the remote plasma Pt process revealed a temperature window from 200 C to 300 C and the remote plasma PtO2 process had a temperature window from 100 C to 300 C.
Originele taal-2Engels
TitelAtomic layer deposition applications ; 4 : 214th ECS meeting, Honolulu,HI, October 12-17 2008
RedacteurenA. Londergan, S. De Gendt
Plaats van productiePennington, NJ, USA
UitgeverijElectrochemical Society, Inc.
Pagina's209-218
ISBN van geprinte versie978-1-56677-650-9
DOI's
StatusGepubliceerd - 2008
Evenement4th Atomic Layer Deposition Application Symposium - Honolulu, HI, Verenigde Staten van Amerika
Duur: 12 okt 200717 okt 2008

Publicatie series

NaamECS Transactions
Volume16
ISSN van geprinte versie1938-6737

Congres

Congres4th Atomic Layer Deposition Application Symposium
LandVerenigde Staten van Amerika
StadHonolulu, HI
Periode12/10/0717/10/08
Ander214th ECS meeting; 4th Atomic layer depsoition application symposium ; Honolulu,HI, October 12-17 2008

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