Remote plasma ALD of platinum and platinum oxide films

H.C.M. Knoops; A.J.M. Mackus; M.E. Donders; M.C.M. Sanden, van de; P.H.L. Notten; W.M.M. Kessels

doi:10.1149/1.3125876

Remote plasma ALD of platinum and platinum oxide films

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

120 Citaten (Scopus)

644 Downloads (Pure)

Samenvatting

Platinum and platinum oxide films were deposited by remote plasma atomic layer deposition (ALD) from the combination of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) precursor and O2 plasma. A short O2 plasma exposure (0.5 s) resulted in low resistivity (15 µ O cm), high density (21 g/cm3), cubic Pt films, whereas a longer O2 plasma exposure (5 s) resulted in semiconductive PtO2 films. In situ spectroscopic ellipsometry studies revealed no significant nucleation delay, different from the thermal ALD process with O2 gas which was used as a benchmark. A broad temperature window (100–300°C) for remote plasma ALD of Pt and PtO2 was demonstrated

Originele taal-2	Engels
Pagina's (van-tot)	G34-G36
Tijdschrift	Electrochemical and Solid-State Letters
Volume	12
Nummer van het tijdschrift	7
DOI's	https://doi.org/10.1149/1.3125876
Status	Gepubliceerd - 2009

Toegang tot document

10.1149/1.3125876

Metis236021Definitieve gepubliceerde versie, 232 KB

Citeer dit

@article{731afb8f05674351bdd086377a461cdc,

title = "Remote plasma ALD of platinum and platinum oxide films",

abstract = "Platinum and platinum oxide films were deposited by remote plasma atomic layer deposition (ALD) from the combination of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) precursor and O2 plasma. A short O2 plasma exposure (0.5 s) resulted in low resistivity (15 µ O cm), high density (21 g/cm3), cubic Pt films, whereas a longer O2 plasma exposure (5 s) resulted in semiconductive PtO2 films. In situ spectroscopic ellipsometry studies revealed no significant nucleation delay, different from the thermal ALD process with O2 gas which was used as a benchmark. A broad temperature window (100–300°C) for remote plasma ALD of Pt and PtO2 was demonstrated",

author = "H.C.M. Knoops and A.J.M. Mackus and M.E. Donders and \{Sanden, van de\}, M.C.M. and P.H.L. Notten and W.M.M. Kessels",

year = "2009",

doi = "10.1149/1.3125876",

language = "English",

volume = "12",

pages = "G34--G36",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "7",

}

TY - JOUR

T1 - Remote plasma ALD of platinum and platinum oxide films

AU - Knoops, H.C.M.

AU - Mackus, A.J.M.

AU - Donders, M.E.

AU - Sanden, van de, M.C.M.

AU - Notten, P.H.L.

AU - Kessels, W.M.M.

PY - 2009

Y1 - 2009

N2 - Platinum and platinum oxide films were deposited by remote plasma atomic layer deposition (ALD) from the combination of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) precursor and O2 plasma. A short O2 plasma exposure (0.5 s) resulted in low resistivity (15 µ O cm), high density (21 g/cm3), cubic Pt films, whereas a longer O2 plasma exposure (5 s) resulted in semiconductive PtO2 films. In situ spectroscopic ellipsometry studies revealed no significant nucleation delay, different from the thermal ALD process with O2 gas which was used as a benchmark. A broad temperature window (100–300°C) for remote plasma ALD of Pt and PtO2 was demonstrated

AB - Platinum and platinum oxide films were deposited by remote plasma atomic layer deposition (ALD) from the combination of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) precursor and O2 plasma. A short O2 plasma exposure (0.5 s) resulted in low resistivity (15 µ O cm), high density (21 g/cm3), cubic Pt films, whereas a longer O2 plasma exposure (5 s) resulted in semiconductive PtO2 films. In situ spectroscopic ellipsometry studies revealed no significant nucleation delay, different from the thermal ALD process with O2 gas which was used as a benchmark. A broad temperature window (100–300°C) for remote plasma ALD of Pt and PtO2 was demonstrated

U2 - 10.1149/1.3125876

DO - 10.1149/1.3125876

M3 - Article

SN - 1099-0062

VL - 12

SP - G34-G36

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Remote plasma ALD of platinum and platinum oxide films

Samenvatting

Toegang tot document

Vingerafdruk

Citeer dit