Samenvatting
From investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH3 (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.
Originele taal-2 | Engels |
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Titel | Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A |
Redacteuren | R.W. Collins |
Plaats van productie | Warrendale, PA, USA |
Uitgeverij | Materials Research Society |
Pagina's | A4.2-1/6 |
ISBN van geprinte versie | 1-558-99517-X |
DOI's | |
Status | Gepubliceerd - 1 dec. 2000 |
Evenement | Amorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, Verenigde Staten van Amerika Duur: 24 apr. 2000 → 28 apr. 2000 |
Publicatie series
Naam | Materials Research Society Symposium Proceedings |
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Volume | 609 |
ISSN van geprinte versie | 0272-9172 |
Congres
Congres | Amorphous and Heterogeneus Silicon Thin Films-2000 |
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Land/Regio | Verenigde Staten van Amerika |
Stad | San Francisco, CA |
Periode | 24/04/00 → 28/04/00 |
Financiering
B.A. Korevaar, C. Smit, and E.A.G. Hamers are gratefully acknowledged for their contribution to the measurements. This work has been financially supported by NWO, NOVEM and FOM.