Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

2 Citaten (Scopus)

Samenvatting

From investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH3 (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.

Originele taal-2Engels
TitelAmorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A
RedacteurenR.W. Collins
Plaats van productieWarrendale, PA, USA
UitgeverijMaterials Research Society
Pagina'sA4.2-1/6
ISBN van geprinte versie1-558-99517-X
DOI's
StatusGepubliceerd - 1 dec. 2000
EvenementAmorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, Verenigde Staten van Amerika
Duur: 24 apr. 200028 apr. 2000

Publicatie series

NaamMaterials Research Society Symposium Proceedings
Volume609
ISSN van geprinte versie0272-9172

Congres

CongresAmorphous and Heterogeneus Silicon Thin Films-2000
Land/RegioVerenigde Staten van Amerika
StadSan Francisco, CA
Periode24/04/0028/04/00

Financiering

B.A. Korevaar, C. Smit, and E.A.G. Hamers are gratefully acknowledged for their contribution to the measurements. This work has been financially supported by NWO, NOVEM and FOM.

Vingerafdruk

Duik in de onderzoeksthema's van 'Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s'. Samen vormen ze een unieke vingerafdruk.

Citeer dit