Reflectivity measurements of deeply etched DBR gratings in InP-based double heterostructures

B. Docter, E.J. Geluk, T. Smet, de, F. Karouta, M.K. Smit

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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Samenvatting

A three-level masking process has been developed for etching DBR gratings in InP/InGaAsP double hetero-structures. The masking consists of a ZEP/Cr/SiOx layer stack. The ZEP layer is used to open the Cr which is a good mask for etching anisotropically the SiOx layer. The InP-based double heterostructure is etched in an ICP process using Cl2:Ar:H2. With this process deep etched waveguides are simultaneously etched with the DBR gratings with various numbers of periods (1 to 5). 2 µm wide waveguides show a loss of 3 dB/cm and the reflectivity of a 2 period DBR grating was found to be 80%.
Originele taal-2Engels
TitelProceedings of the 12th Annual Symposium of the IEEE/LEOS Benelux Chapter, 17-18 December 2007, Brussels, Belgium
RedacteurenM. Delqué, Ph. Emplit, S.P. Gorza, P. Kockaert, X.J.M. Leijtens
Plaats van productieBrussels
UitgeverijIEEE/LEOS
Pagina's111-114
ISBN van geprinte versie978-2-9600753-0-4
StatusGepubliceerd - 2007
Evenement12th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 17-18, 2007, Brussels, Belgium - Brussels, België
Duur: 17 dec 200718 dec 2007

Congres

Congres12th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 17-18, 2007, Brussels, Belgium
Land/RegioBelgië
StadBrussels
Periode17/12/0718/12/07
Ander12th Annual symposium of the IEEE/LEOS Benelux Chapter 2007, Brussels, Belgium

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