The utility of potential diagrams in predicting the reaction zone morphology developed between a III-V compound semiconductor and a metal is exemplified by the interactions in the GaSb-Co system. A number of experiments were designed to test the model. These are aimed at determining phase equilibria in the Ga-Sb-Co system and studying the microstructural evolution of the reaction zone in bulk as well as thin-film diffusion couples.
|Tijdschrift||Diffusion and Defect Data. Part A, Defect and Diffusion Forum|
|Status||Gepubliceerd - 2001|