Samenvatting
Rational bottom-up assembly of nanowire networks may be a way to successfully continue the miniaturization in the semiconductor industry. A generic method is developed that ensures InSb nanowires meet under the optimal angle for the formation of single-crystalline structures, which represents a promising platform for the future random access memories based on Majorana fermions.
Originele taal-2 | Engels |
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Pagina's (van-tot) | 4875-4879 |
Tijdschrift | Advanced Materials |
Volume | 26 |
Nummer van het tijdschrift | 28 |
DOI's | |
Status | Gepubliceerd - 2014 |