Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

Adane K. Geremew, Fariborz Kargar, E. Zhang, S. Zhao, E. Aytan, Matthew Bloodgood, Tina T. Salguero, Sergey Rumyantsev, A. Fedoseyev, Dan Fleetwood, Alexander A. Balandin (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

19 Citaten (Scopus)


We demonstrate that charge-density-wave devices with quasi-two-dimensional 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 1014 H+cm−2. The current–voltage characteristics of these devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other two-dimensional devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these “all-metallic” charge-density-wave devices is attributed to the quasi-2D nature of the electron transport in the nanoscale-thickness channel, high concentration of charge carriers in the utilized charge-density-wave phases, and two-dimensional device design. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments.
Originele taal-2Engels
Pagina's (van-tot)8380-8386
Aantal pagina's7
Nummer van het tijdschrift17
StatusGepubliceerd - 7 mei 2019
Extern gepubliceerdJa


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