Processing of intra-cavity VCSELs in structures with doped DBRs

L.M. Augustin, R.C. Strijbos, E. Smalbrugge, K. Choquette, G. Verschaffelt, E.J. Geluk, F. Karouta, T.G. Roer, van de

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Standard GaAs-based VCSEL structures with doped DBR mirrors are processed into intra-cavity contacted VCSELs with asymmetric current injection to investigate their polarisation behaviour. The processing requires reflectometry measurements during etching of the first and second mesa. The p- and n-contacts are deposited on an AlGaAs layer with the lowest Al-content of the upper and bottom DBR respectively. A dichromate solution was used to etch selectively the higher Al-content layer of the DBRs before depositing the contacts.
Originele taal-2Engels
TitelProceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium
RedacteurenF. Berghmans, H. Thienpont, J. Danckaert, L. Desmet
Plaats van productieBrussels, Belgium
ISBN van geprinte versie90-5487247-0
StatusGepubliceerd - 2001
Evenement6th Annual Symposium of the IEEE/LEOS Benelux Chapter - Brussels, België
Duur: 3 dec 20013 dec 2001
Congresnummer: 6


Congres6th Annual Symposium of the IEEE/LEOS Benelux Chapter
Ander6th Ann. Symp. of the IEEE/LEOS Benelux Chapter


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