Processing induced defects in submicron active-passive areas for InP-based membranes on silicon (IMOS)

R. Zhang; J.J.G.M. Tol, van der; P.J.A. Thijs; M.K. Smit

Processing induced defects in submicron active-passive areas for InP-based membranes on silicon (IMOS)

R. Zhang, J.J.G.M. Tol, van der, P.J.A. Thijs, M.K. Smit

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic

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Samenvatting

The high vertical index contrast and the small thickness of IMOS allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration is an essential step towards complete PICs. In this paper we will present our results on the analysis of submicron active-passive integration for IMOS platform. A trap model based on rate equations is built up to evaluate degradation of InGaAsP QWs due to the clean room processing, especially from the dry etching. The results show that the model fits quite well with the experimental data and that defect densities increase strongly for smaller active regions.

Originele taal-2	Engels
Titel	Proceedings of the 17th Annual symposium of the IEEE Photonics Benelux Chapter, 29-30 Novembre 2012, Mons, Belgium
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	135-138
Status	Gepubliceerd - 2012
Evenement	17th Annual Symposium of the IEEE Photonics Benelux Chapter - Mons, België Duur: 29 nov. 2012 → 30 nov. 2012 Congresnummer: 17 http://www.telecom.fpms.ac.be/IPS_symposium2012/

Congres

Congres	17th Annual Symposium of the IEEE Photonics Benelux Chapter
Land/Regio	België
Stad	Mons
Periode	29/11/12 → 30/11/12
Ander	2012 Annual Symposium of the IEEE Photonics Chapter
Internet adres	http://www.telecom.fpms.ac.be/IPS_symposium2012/

Citeer dit

@inproceedings{ec54909ac3454beaa8f94e2c7b89059a,

title = "Processing induced defects in submicron active-passive areas for InP-based membranes on silicon (IMOS)",

abstract = "The high vertical index contrast and the small thickness of IMOS allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration is an essential step towards complete PICs. In this paper we will present our results on the analysis of submicron active-passive integration for IMOS platform. A trap model based on rate equations is built up to evaluate degradation of InGaAsP QWs due to the clean room processing, especially from the dry etching. The results show that the model fits quite well with the experimental data and that defect densities increase strongly for smaller active regions.",

author = "R. Zhang and {Tol, van der}, J.J.G.M. and P.J.A. Thijs and M.K. Smit",

year = "2012",

language = "English",

pages = "135--138",

booktitle = "Proceedings of the 17th Annual symposium of the IEEE Photonics Benelux Chapter, 29-30 Novembre 2012, Mons, Belgium",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "17th Annual Symposium of the IEEE Photonics Benelux Chapter ; Conference date: 29-11-2012 Through 30-11-2012",

url = "http://www.telecom.fpms.ac.be/IPS_symposium2012/",

}

Zhang, R, Tol, van der, JJGM, Thijs, PJA & Smit, MK 2012, Processing induced defects in submicron active-passive areas for InP-based membranes on silicon (IMOS). in Proceedings of the 17th Annual symposium of the IEEE Photonics Benelux Chapter, 29-30 Novembre 2012, Mons, Belgium. Institute of Electrical and Electronics Engineers, Piscataway, blz. 135-138, 17th Annual Symposium of the IEEE Photonics Benelux Chapter, Mons, België, 29/11/12.

Processing induced defects in submicron active-passive areas for InP-based membranes on silicon (IMOS). / Zhang, R.; Tol, van der, J.J.G.M.; Thijs, P.J.A. et al.
Proceedings of the 17th Annual symposium of the IEEE Photonics Benelux Chapter, 29-30 Novembre 2012, Mons, Belgium. Piscataway: Institute of Electrical and Electronics Engineers, 2012. blz. 135-138.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic

TY - GEN

T1 - Processing induced defects in submicron active-passive areas for InP-based membranes on silicon (IMOS)

AU - Zhang, R.

AU - Tol, van der, J.J.G.M.

AU - Thijs, P.J.A.

AU - Smit, M.K.

N1 - Conference code: 17

PY - 2012

Y1 - 2012

N2 - The high vertical index contrast and the small thickness of IMOS allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration is an essential step towards complete PICs. In this paper we will present our results on the analysis of submicron active-passive integration for IMOS platform. A trap model based on rate equations is built up to evaluate degradation of InGaAsP QWs due to the clean room processing, especially from the dry etching. The results show that the model fits quite well with the experimental data and that defect densities increase strongly for smaller active regions.

AB - The high vertical index contrast and the small thickness of IMOS allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration is an essential step towards complete PICs. In this paper we will present our results on the analysis of submicron active-passive integration for IMOS platform. A trap model based on rate equations is built up to evaluate degradation of InGaAsP QWs due to the clean room processing, especially from the dry etching. The results show that the model fits quite well with the experimental data and that defect densities increase strongly for smaller active regions.

M3 - Conference contribution

SP - 135

EP - 138

BT - Proceedings of the 17th Annual symposium of the IEEE Photonics Benelux Chapter, 29-30 Novembre 2012, Mons, Belgium

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 17th Annual Symposium of the IEEE Photonics Benelux Chapter

Y2 - 29 November 2012 through 30 November 2012

ER -

Processing induced defects in submicron active-passive areas for InP-based membranes on silicon (IMOS)

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