POx/Al2O3 stacks: Highly effective surface passivation of crystalline silicon with a large positive fixed charge

Lachlan E. Black; W. M.M. Kessels

doi:10.1063/1.5029460

PO_x/Al₂O₃ stacks: Highly effective surface passivation of crystalline silicon with a large positive fixed charge

Lachlan E. Black
, W. M.M. Kessels

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

20 Citaten (Scopus)

288 Downloads (Pure)

Samenvatting

Thin-film stacks of phosphorus oxide (PO_x) and aluminium oxide (Al₂O₃) are shown to provide highly effective passivation of crystalline silicon (c-Si) surfaces. Surface recombination velocities as low as 1.7 cm s^-1 and saturation current densities J₀ _s as low as 3.3 fA cm^-2 are obtained on n-type (100) c-Si surfaces passivated by 6 nm/14 nm thick PO_x/Al₂O₃ stacks deposited in an atomic layer deposition system and annealed at 450 °C. This excellent passivation can be attributed in part to an unusually large positive fixed charge density of up to 4.7 × 10¹² cm^-2, which makes such stacks especially suitable for passivation of n-type Si surfaces.

Originele taal-2	Engels
Artikelnummer	201603
Tijdschrift	Applied Physics Letters
Volume	112
Nummer van het tijdschrift	20
DOI's	https://doi.org/10.1063/1.5029460
Status	Gepubliceerd - 14 mei 2018

Financiering

The authors are grateful to B. W. H. van de Loo, B. Macco, J. Melskens, and M. A. Verheijen for useful discussions and feedback, C. A. A. van Helvoirt, J. van Gerwen for technical support, and H. W. van Zeijl for assistance with the C–V measurements. Al contact evaporation and C–V measurements were performed at the Delft University of Technology. The authors acknowledge financial support for this research from the Top consortia for Knowledge and Innovation (TKI) Solar Energy programs “COMPASS” (TEID215022) and “RADAR” (TEUE116905) of the Ministry of Economic Affairs of the Netherlands.

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abstract = "Thin-film stacks of phosphorus oxide (POx) and aluminium oxide (Al2O3) are shown to provide highly effective passivation of crystalline silicon (c-Si) surfaces. Surface recombination velocities as low as 1.7 cm s-1 and saturation current densities J0 s as low as 3.3 fA cm-2 are obtained on n-type (100) c-Si surfaces passivated by 6 nm/14 nm thick POx/Al2O3 stacks deposited in an atomic layer deposition system and annealed at 450 °C. This excellent passivation can be attributed in part to an unusually large positive fixed charge density of up to 4.7 × 1012 cm-2, which makes such stacks especially suitable for passivation of n-type Si surfaces.",

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AB - Thin-film stacks of phosphorus oxide (POx) and aluminium oxide (Al2O3) are shown to provide highly effective passivation of crystalline silicon (c-Si) surfaces. Surface recombination velocities as low as 1.7 cm s-1 and saturation current densities J0 s as low as 3.3 fA cm-2 are obtained on n-type (100) c-Si surfaces passivated by 6 nm/14 nm thick POx/Al2O3 stacks deposited in an atomic layer deposition system and annealed at 450 °C. This excellent passivation can be attributed in part to an unusually large positive fixed charge density of up to 4.7 × 1012 cm-2, which makes such stacks especially suitable for passivation of n-type Si surfaces.

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