We demonstrate the successful fabrication of passive photonic devices in a 300-nm thick Indium phosphide (InP) membrane bonded on glass, using a post-bonding fabrication scheme. Our results show that post-bonding processing can be used to allow double-side processing of InP membrane devices. Furthermore, the yield in InP membrane fabrication can be increased by bonding the membrane prior to patterning. Characterization results show good performance in power splitters and ring resonators (Q ~ 15,000). However, waveguide losses were found to be very high (25 dB/cm) and need to be reduced by e.g. optimizing the lithography steps.
|Status||Gepubliceerd - 2011|
|Evenement||16th Annual Symposium of the IEEE Photonics Benelux Chapter, December 1-2, 2011, Ghent, Belgium - Ghent, België|
Duur: 1 dec 2011 → 2 dec 2011
|Congres||16th Annual Symposium of the IEEE Photonics Benelux Chapter, December 1-2, 2011, Ghent, Belgium|
|Periode||1/12/11 → 2/12/11|
|Ander||16th Annual Symposium of the IEEE Photonics Benelux Chapter|
Bibliografische notaEditor(s): Bienstman, P.; Morthier, G.; Roelkens, G.; et al.
Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium
Pello, J., Saboya, P., Keyvaninia, S., Tol, van der, J. J. G. M., Roelkens, G., Ambrosius, H. P. M. M., & Smit, M. K. (2011). Post-bonding fabrication of photonic devices in an Indium phosphide membrane bonded on glass. 213-216. Postersessie gepresenteerd op 16th Annual Symposium of the IEEE Photonics Benelux Chapter, December 1-2, 2011, Ghent, Belgium, Ghent, België.