Position-controlled [100] InP nanowire arrays

J. Wang, S.R. Plissard, M. Hocevar, T.T.T. Vu, T. Zehender, W.G.G. Immink, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers

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We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.
Originele taal-2Engels
Pagina's (van-tot)1-3
Aantal pagina's3
TijdschriftApplied Physics Letters
Nummer van het tijdschrift5
StatusGepubliceerd - 2012


Citeer dit

Wang, J., Plissard, S. R., Hocevar, M., Vu, T. T. T., Zehender, T., Immink, W. G. G., ... Bakkers, E. P. A. M. (2012). Position-controlled [100] InP nanowire arrays. Applied Physics Letters, 100(5), 1-3. [053107]. https://doi.org/10.1063/1.3679136