Population dynamics of excitons in silicon nanocrystals structures under strong optical excitation

O.A. Shalygina, D.M. Zhigunov, D.A. Palenov, V.Yu Timoshenko, P.K. Kashkarov, M. Zacharias, P.M. Koenraad

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

We report on the experimental and theoretical studies of population/depopulation dynamics of excitons in the structures with Si nanocrystals in SiO2 matrix (nc-Si/SiO2) under strong optical excitation. The experimental results are explained using a phenomenological model based on rate equations for coupled system of energy donors (excitons) and energy acceptors (erbium ions). Exciton luminescence is found to exhibit superlinear dependence for Er-doped samples. At the same time the Er-related luminescence at 1.5 µm shows a saturation of the intensity and shortening of the lifetime, which are attributed to the population inversion of the Er ions states. The obtained results demonstrate that nc-Si/SiO2:Er systems can be used for applications in Si-based optical amplifiers and lasers, compatible with planar Si-technology.
Originele taal-2Engels
TitelInternational Conference on Materials for Advanced Technologies, ICMAT 2007
Pagina's196-198
DOI's
StatusGepubliceerd - 2008

Publicatie series

NaamAdvanced Materials Research
Volume31
ISSN van geprinte versie1022-6680

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