Plasma atomic layer deposition

H.C.M. Knoops (Uitvinder), K. de Peuter (Uitvinder), W.M.M. Kessels (Uitvinder)

Onderzoeksoutput: OctrooiOctrooi-publicatie

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Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.
Originele taal-2Engels
OctrooinummerUS9637823
StatusGepubliceerd - 2 mei 2017

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