Plasma-assisted atomic layer deposition of TiO2 compact layers for flexible mesostructured perovskite solar cells

V. Zardetto, F. Giacomo, Di, G. Lucarelli, W.M.M. Kessels, T.M. Brown, M. Creatore

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In mesostructured perovskite solar cell devices, charge recombination processes at the interface between the transparent conductive oxide, perovskite and hole transport layer are suppressed by depositing an efficient compact TiO2 blocking layer. In this contribution we investigate the role of the atomic layer deposited TiO2 on ITO-PET substrates in hybrid halide (CH3NH3PbI3−xClx) perovskite solar cells. In the absence of the TiO2 layer, very low open circuit voltage (VOC = 35 mV) and efficiency (η = 0.02%) values are observed. The analysis of JV dark current reveals the lack of rectifying behaviour at the above-mentioned interface. The introduction of ultra-thin ALD layers (from 2.5 to 44 nm) leads to an increment in all the photovoltaic parameters and, consequently, in the photovoltaic conversion efficiency. A maximum power conversion efficiency of 9.2% is achieved, much higher than the 4% obtained when a low temperature conventional sol gel TiO2 compact layer is used. The higher quality of the ALD layer in terms of low defect density and low level of impurities with respect to the solution processed approach has been highlighted by electrochemical characterization and XPS analysis.
Originele taal-2Engels
Pagina's (van-tot)447-453
TijdschriftSolar Energy
Volume150
DOI's
StatusGepubliceerd - 1 jul 2017

Vingerafdruk

Atomic layer deposition
Conversion efficiency
Plasmas
Defect density
Dark currents
Open circuit voltage
Volatile organic compounds
Perovskite
Oxides
Sol-gels
X ray photoelectron spectroscopy
Impurities
Substrates
Temperature
Perovskite solar cells
perovskite

Citeer dit

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title = "Plasma-assisted atomic layer deposition of TiO2 compact layers for flexible mesostructured perovskite solar cells",
abstract = "In mesostructured perovskite solar cell devices, charge recombination processes at the interface between the transparent conductive oxide, perovskite and hole transport layer are suppressed by depositing an efficient compact TiO2 blocking layer. In this contribution we investigate the role of the atomic layer deposited TiO2 on ITO-PET substrates in hybrid halide (CH3NH3PbI3−xClx) perovskite solar cells. In the absence of the TiO2 layer, very low open circuit voltage (VOC = 35 mV) and efficiency (η = 0.02{\%}) values are observed. The analysis of JV dark current reveals the lack of rectifying behaviour at the above-mentioned interface. The introduction of ultra-thin ALD layers (from 2.5 to 44 nm) leads to an increment in all the photovoltaic parameters and, consequently, in the photovoltaic conversion efficiency. A maximum power conversion efficiency of 9.2{\%} is achieved, much higher than the 4{\%} obtained when a low temperature conventional sol gel TiO2 compact layer is used. The higher quality of the ALD layer in terms of low defect density and low level of impurities with respect to the solution processed approach has been highlighted by electrochemical characterization and XPS analysis.",
keywords = "ALD, Thin films, Photovoltaics, Interface engineering, TiO2, Perovskites",
author = "V. Zardetto and {Giacomo, Di}, F. and G. Lucarelli and W.M.M. Kessels and T.M. Brown and M. Creatore",
year = "2017",
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Plasma-assisted atomic layer deposition of TiO2 compact layers for flexible mesostructured perovskite solar cells. / Zardetto, V.; Giacomo, Di, F.; Lucarelli, G.; Kessels, W.M.M.; Brown, T.M.; Creatore, M.

In: Solar Energy, Vol. 150, 01.07.2017, blz. 447-453.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

T1 - Plasma-assisted atomic layer deposition of TiO2 compact layers for flexible mesostructured perovskite solar cells

AU - Zardetto, V.

AU - Giacomo, Di, F.

AU - Lucarelli, G.

AU - Kessels, W.M.M.

AU - Brown, T.M.

AU - Creatore, M.

PY - 2017/7/1

Y1 - 2017/7/1

N2 - In mesostructured perovskite solar cell devices, charge recombination processes at the interface between the transparent conductive oxide, perovskite and hole transport layer are suppressed by depositing an efficient compact TiO2 blocking layer. In this contribution we investigate the role of the atomic layer deposited TiO2 on ITO-PET substrates in hybrid halide (CH3NH3PbI3−xClx) perovskite solar cells. In the absence of the TiO2 layer, very low open circuit voltage (VOC = 35 mV) and efficiency (η = 0.02%) values are observed. The analysis of JV dark current reveals the lack of rectifying behaviour at the above-mentioned interface. The introduction of ultra-thin ALD layers (from 2.5 to 44 nm) leads to an increment in all the photovoltaic parameters and, consequently, in the photovoltaic conversion efficiency. A maximum power conversion efficiency of 9.2% is achieved, much higher than the 4% obtained when a low temperature conventional sol gel TiO2 compact layer is used. The higher quality of the ALD layer in terms of low defect density and low level of impurities with respect to the solution processed approach has been highlighted by electrochemical characterization and XPS analysis.

AB - In mesostructured perovskite solar cell devices, charge recombination processes at the interface between the transparent conductive oxide, perovskite and hole transport layer are suppressed by depositing an efficient compact TiO2 blocking layer. In this contribution we investigate the role of the atomic layer deposited TiO2 on ITO-PET substrates in hybrid halide (CH3NH3PbI3−xClx) perovskite solar cells. In the absence of the TiO2 layer, very low open circuit voltage (VOC = 35 mV) and efficiency (η = 0.02%) values are observed. The analysis of JV dark current reveals the lack of rectifying behaviour at the above-mentioned interface. The introduction of ultra-thin ALD layers (from 2.5 to 44 nm) leads to an increment in all the photovoltaic parameters and, consequently, in the photovoltaic conversion efficiency. A maximum power conversion efficiency of 9.2% is achieved, much higher than the 4% obtained when a low temperature conventional sol gel TiO2 compact layer is used. The higher quality of the ALD layer in terms of low defect density and low level of impurities with respect to the solution processed approach has been highlighted by electrochemical characterization and XPS analysis.

KW - ALD

KW - Thin films

KW - Photovoltaics

KW - Interface engineering

KW - TiO2

KW - Perovskites

U2 - 10.1016/j.solener.2017.04.028

DO - 10.1016/j.solener.2017.04.028

M3 - Article

VL - 150

SP - 447

EP - 453

JO - Solar Energy

JF - Solar Energy

SN - 0038-092X

ER -