Picosecond optospintronic tunnel junctions

Luding Wang, Houyi Cheng, Pingzhi Li, Youri L.W. van Hees, Yang Liu, Kaihua Cao, Reinoud Lavrijsen, Xiaoyang Lin, Bert Koopmans, Weisheng S. Zhao (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

26 Citaten (Scopus)
74 Downloads (Pure)


Perpendicular magnetic tunnel junctions (p-MTJs), as building blocks of spintronic devices, offer substantial potential for next-generation nonvolatile memory applications. However, their performance is fundamentally hindered by a subnanosecond speed limitation, due to spin-polarized-current-based mechanisms. Here, we report an optospintronic tunnel junction (OTJ) device with a picosecond switching speed, ultralow power, high magnetoresistance ratio, high thermal stability, and nonvolatility. This device incorporates an all-optically switchable Gd/Co bilayer coupled to a CoFeB/MgO-based p-MTJ, by subtle tuning of Ruderman–Kittel–Kasuya–Yosida interaction. An all-optical “writing” of the OTJ within 10 ps is experimentally demonstrated by time-resolved measurements. The device shows a reliable resistance “readout” with a relatively high tunnel magnetoresistance of 34.7%, as well as promising scaling toward the nanoscale with ultralow power consumption (
Originele taal-2Engels
Aantal pagina's7
TijdschriftProceedings of the National Academy of Sciences of the United States of America (PNAS)
Nummer van het tijdschrift24
StatusGepubliceerd - 14 jun. 2022


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