Physics of plasma etching and plasma deposition

D.C. Schram, F.J. Hoog, de, T.J. Bisschops, G.M.W. Kroesen

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The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state. Emphasis is place on the first 2 regions in relation to the 3rd. The discussion is illustrated with measured plasma data for etching of SiO2 with CF4-Ar plasma mixts. and the deposition of C layers with CH4-Ar-H2 plasmas
Originele taal-2Engels
TitelSASP 86, symposium on atomic and surface physics : contributions
RedacteurenF. Howorka, W. Lindinger, T.D. Maerk
Plaats van productieInnsbruck
UitgeverijUniversität Innsbruck
Pagina's181-187
StatusGepubliceerd - 1986

Vingerafdruk

plasma etching
physics
magnetohydrodynamic flow
etching
kinetics
gases

Citeer dit

Schram, D. C., Hoog, de, F. J., Bisschops, T. J., & Kroesen, G. M. W. (1986). Physics of plasma etching and plasma deposition. In F. Howorka, W. Lindinger, & T. D. Maerk (editors), SASP 86, symposium on atomic and surface physics : contributions (blz. 181-187). Innsbruck: Universität Innsbruck.
Schram, D.C. ; Hoog, de, F.J. ; Bisschops, T.J. ; Kroesen, G.M.W. / Physics of plasma etching and plasma deposition. SASP 86, symposium on atomic and surface physics : contributions. redacteur / F. Howorka ; W. Lindinger ; T.D. Maerk. Innsbruck : Universität Innsbruck, 1986. blz. 181-187
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title = "Physics of plasma etching and plasma deposition",
abstract = "The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state. Emphasis is place on the first 2 regions in relation to the 3rd. The discussion is illustrated with measured plasma data for etching of SiO2 with CF4-Ar plasma mixts. and the deposition of C layers with CH4-Ar-H2 plasmas",
author = "D.C. Schram and {Hoog, de}, F.J. and T.J. Bisschops and G.M.W. Kroesen",
year = "1986",
language = "English",
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editor = "F. Howorka and W. Lindinger and T.D. Maerk",
booktitle = "SASP 86, symposium on atomic and surface physics : contributions",
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Schram, DC, Hoog, de, FJ, Bisschops, TJ & Kroesen, GMW 1986, Physics of plasma etching and plasma deposition. in F Howorka, W Lindinger & TD Maerk (redactie), SASP 86, symposium on atomic and surface physics : contributions. Universität Innsbruck, Innsbruck, blz. 181-187.

Physics of plasma etching and plasma deposition. / Schram, D.C.; Hoog, de, F.J.; Bisschops, T.J.; Kroesen, G.M.W.

SASP 86, symposium on atomic and surface physics : contributions. redactie / F. Howorka; W. Lindinger; T.D. Maerk. Innsbruck : Universität Innsbruck, 1986. blz. 181-187.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

TY - GEN

T1 - Physics of plasma etching and plasma deposition

AU - Schram, D.C.

AU - Hoog, de, F.J.

AU - Bisschops, T.J.

AU - Kroesen, G.M.W.

PY - 1986

Y1 - 1986

N2 - The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state. Emphasis is place on the first 2 regions in relation to the 3rd. The discussion is illustrated with measured plasma data for etching of SiO2 with CF4-Ar plasma mixts. and the deposition of C layers with CH4-Ar-H2 plasmas

AB - The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state. Emphasis is place on the first 2 regions in relation to the 3rd. The discussion is illustrated with measured plasma data for etching of SiO2 with CF4-Ar plasma mixts. and the deposition of C layers with CH4-Ar-H2 plasmas

M3 - Conference contribution

SP - 181

EP - 187

BT - SASP 86, symposium on atomic and surface physics : contributions

A2 - Howorka, F.

A2 - Lindinger, W.

A2 - Maerk, T.D.

PB - Universität Innsbruck

CY - Innsbruck

ER -

Schram DC, Hoog, de FJ, Bisschops TJ, Kroesen GMW. Physics of plasma etching and plasma deposition. In Howorka F, Lindinger W, Maerk TD, redacteurs, SASP 86, symposium on atomic and surface physics : contributions. Innsbruck: Universität Innsbruck. 1986. blz. 181-187