Photoluminescence on low-temperature grown InAs/GaAs quantum dots

D. Sreenivasan, J.E.M. Haverkort, H.H. Zhan, T. Eijkemans, R. Nötzel, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

We study low temperature (LT, 250°C) grown Stranski-Krastanov InAs/GaAs quantum dots (QDs) to combine the large QD optical nonlinearity with an ultrafast response time. We observe a QD photoluminescence peak around 1200 nm on top of a background due to the AsGa-VAs center. The QD-emission line disappears with increasing temperature around 30K. The PL-efficiency increases with a factor of 45- 280 as a function of excitation wavelength around the GaAs bandgap. Our observations point towards QDs with good optical quality, embedded in a LT-GaAs barrier in which the carriers are efficiently trapped at anti-site defects.
Originele taal-2Engels
TitelProceedings of the 9th annual symposium of the IEEE/LEOS Benelux Chapter 2-3 December 2004, Ghent, Belgium
Plaats van productieGhent, Belgium
Pagina's291-294
StatusGepubliceerd - 2004
Evenement9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium - Ghent, België
Duur: 2 dec 20043 dec 2004

Congres

Congres9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium
LandBelgië
StadGhent
Periode2/12/043/12/04
AnderAnn. Symp. IEEE/LEOS Benelux Chapter

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  • Citeer dit

    Sreenivasan, D., Haverkort, J. E. M., Zhan, H. H., Eijkemans, T., Nötzel, R., & Wolter, J. H. (2004). Photoluminescence on low-temperature grown InAs/GaAs quantum dots. In Proceedings of the 9th annual symposium of the IEEE/LEOS Benelux Chapter 2-3 December 2004, Ghent, Belgium (blz. 291-294). Ghent, Belgium.