Photoluminescence from a single InGaAs epitaxial quantum rod

G. Sek, P. Podemski, J. Misiewicz, L. Li, A. Fiore, G. Patriarche

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Samenvatting

Microphotoluminescence (µ-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaAs substrate. The exciton and biexciton emission from a single quantum rod has been detected via the excitation power dependence of the µ-PL spectra. The origin of the single rod lines has been confirmed by a rate equation model. For a number of quantum rods within the investigated ensemble, the biexciton binding energy has been determined to be in the range of 1.0–2.2 meV.
Originele taal-2Engels
Artikelnummer021901
Pagina's (van-tot)021901-1/3
Aantal pagina's3
TijdschriftApplied Physics Letters
Volume92
Nummer van het tijdschrift2
DOI's
StatusGepubliceerd - 2008

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