Samenvatting
Microphotoluminescence (µ-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaAs substrate. The exciton and biexciton emission from a single quantum rod has been detected via the excitation power dependence of the µ-PL spectra. The origin of the single rod lines has been confirmed by a rate equation model. For a number of quantum rods within the investigated ensemble, the biexciton binding energy has been determined to be in the range of 1.0–2.2 meV.
Originele taal-2 | Engels |
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Artikelnummer | 021901 |
Pagina's (van-tot) | 021901-1/3 |
Aantal pagina's | 3 |
Tijdschrift | Applied Physics Letters |
Volume | 92 |
Nummer van het tijdschrift | 2 |
DOI's | |
Status | Gepubliceerd - 2008 |