Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

2 Citaten (Scopus)

Samenvatting

This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71–86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.
Originele taal-2Engels
Titel2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1081-1082
Aantal pagina's2
ISBN van elektronische versie978-1-7281-0692-2
DOI's
StatusGepubliceerd - 31 okt 2019
Evenement2019 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2019 - Atlanta, Verenigde Staten van Amerika
Duur: 7 jul 201912 jul 2019
https://www.2019apsursi.org/

Congres

Congres2019 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2019
Verkorte titelAPSURSI 2019
Land/RegioVerenigde Staten van Amerika
StadAtlanta
Periode7/07/1912/07/19
Internet adres

Vingerafdruk

Duik in de onderzoeksthema's van 'Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies'. Samen vormen ze een unieke vingerafdruk.

Citeer dit