Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies

Alhassan Aljarosha; Piyush Kaul; Bart Smolders; M.K. Matters-Kammerer; Rob Maaskant

doi:10.1109/APUSNCURSINRSM.2019.8888834

Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies

Alhassan Aljarosha, Piyush Kaul, Bart Smolders, M.K. Matters-Kammerer, Rob Maaskant

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

3 Citaten (Scopus)

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This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71–86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.

Originele taal-2	Engels
Titel	2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	1081-1082
Aantal pagina's	2
ISBN van elektronische versie	978-1-7281-0692-2
DOI's	https://doi.org/10.1109/APUSNCURSINRSM.2019.8888834
Status	Gepubliceerd - 31 okt. 2019
Evenement	2019 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2019 - Atlanta, Verenigde Staten van Amerika Duur: 7 jul. 2019 → 12 jul. 2019 https://www.2019apsursi.org/

Congres

Congres	2019 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2019
Verkorte titel	APSURSI 2019
Land/Regio	Verenigde Staten van Amerika
Stad	Atlanta
Periode	7/07/19 → 12/07/19
Internet adres	https://www.2019apsursi.org/

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10.1109/APUSNCURSINRSM.2019.8888834

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Aljarosha, A., Kaul, P., Smolders, B., Matters-Kammerer, M. K., & Maaskant, R. (2019). Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies. In 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings (blz. 1081-1082). Artikel 8888834 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/APUSNCURSINRSM.2019.8888834

Aljarosha, Alhassan ; Kaul, Piyush ; Smolders, Bart et al. / Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies. 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings. Piscataway : Institute of Electrical and Electronics Engineers, 2019. blz. 1081-1082

@inproceedings{e89647680d62433395ed66332da4043f,

title = "Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies",

abstract = "This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71–86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.",

author = "Alhassan Aljarosha and Piyush Kaul and Bart Smolders and M.K. Matters-Kammerer and Rob Maaskant",

year = "2019",

month = oct,

day = "31",

doi = "10.1109/APUSNCURSINRSM.2019.8888834",

language = "English",

pages = "1081--1082",

booktitle = "2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2019 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2019, APSURSI 2019 ; Conference date: 07-07-2019 Through 12-07-2019",

url = "https://www.2019apsursi.org/",

}

Aljarosha, A , Kaul, P , Smolders, B , Matters-Kammerer, MK & Maaskant, R 2019, Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies. in 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings., 8888834, Institute of Electrical and Electronics Engineers, Piscataway, blz. 1081-1082, 2019 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2019, Atlanta, Georgia, Verenigde Staten van Amerika, 7/07/19. https://doi.org/10.1109/APUSNCURSINRSM.2019.8888834

Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies. / Aljarosha, Alhassan ; Kaul, Piyush ; Smolders, Bart et al.
2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings. Piscataway: Institute of Electrical and Electronics Engineers, 2019. blz. 1081-1082 8888834.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies

AU - Aljarosha, Alhassan

AU - Kaul, Piyush

AU - Smolders, Bart

AU - Matters-Kammerer, M.K.

AU - Maaskant, Rob

PY - 2019/10/31

Y1 - 2019/10/31

N2 - This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71–86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.

AB - This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71–86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.

UR - http://www.scopus.com/inward/record.url?scp=85075238781&partnerID=8YFLogxK

U2 - 10.1109/APUSNCURSINRSM.2019.8888834

DO - 10.1109/APUSNCURSINRSM.2019.8888834

M3 - Conference contribution

SP - 1081

EP - 1082

BT - 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2019 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2019

Y2 - 7 July 2019 through 12 July 2019

ER -

Aljarosha A , Kaul P , Smolders B , Matters-Kammerer MK , Maaskant R. Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies. In 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings. Piscataway: Institute of Electrical and Electronics Engineers. 2019. blz. 1081-1082. 8888834 doi: 10.1109/APUSNCURSINRSM.2019.8888834

Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies

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